Semiconductor Light Emitting Device Outer Protection Layer Stress Reduction
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Solution Overview
Problem
Existing semiconductor light emitting devices face challenges in spatially insulating each layer and reducing stress caused by dielectric materials at the outer circumference, which can lead to fabrication issues and reliability problems.
Innovation Solution
A semiconductor light emitting device is fabricated with a light emitting structure comprising conductive type semiconductor layers, an active layer, and a reflective electrode layer, along with an outer protection layer and groove to prevent dielectric material formation at the outer circumference, reducing stress and improving electrical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dielectric material is formed at the outer circumference of the light emitting structure, then electrical insulation is improved, but stress and reliability problems occur
Solution Approach 1:
The patent removes the dielectric material from the outer circumference region where it causes stress problems. Instead of forming dielectric material over the entire structure, the invention selectively extracts it from the outer circumference while maintaining it only in the central region, thus eliminating stress-related reliability issues while preserving electrical insulation where needed.
Solution Approach 2:
The patent applies different structural configurations to different regions of the light emitting device. The central region retains dielectric material for electrical insulation, while the outer circumference region eliminates dielectric material to reduce stress. This local differentiation of material presence resolves the contradiction between insulation and stress.
2Reliability
If dielectric material is formed at the outer circumference, then electrical insulation is improved, but fabrication complexity increases
Solution Approach 1:
The invention simplifies fabrication by extracting the dielectric material formation step from the outer circumference region. This reduces the number of fabrication steps required compared to forming dielectric material uniformly across the entire structure, while still achieving adequate electrical insulation in the central region.
3Stress or pressure
If outer protection layer is added at the outer circumference, then stress is reduced, but device complexity increases
Solution Approach 1:
The outer protection layer serves multiple functions simultaneously: it reduces stress at the outer circumference, provides structural support, and eliminates the need for separate dielectric material in that region. This multi-functionality justifies the added structural element by consolidating multiple protective roles into a single layer.
Data Source
AI summary
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.