Semiconductor Light Emitting Device With Quantum Dot Layer
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Solution Overview
Problem
Current semiconductor light emitting devices using III-V group nitride semiconductors face limitations in achieving high light emitting efficiency, particularly in manufacturing processes and light emission efficiency.
Innovation Solution
The formation of a quantum dot layer on or below the active layer, along with a cap layer for protection, enhances light emitting efficiency by creating a roughness that improves carrier confinement and reduces contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a quantum dot layer is formed on or below the active layer, then light emitting efficiency is improved through enhanced carrier confinement, but device structure becomes more complex
Solution Approach 1:
The quantum dot layer is integrated within the existing semiconductor layer structure, nesting the quantum dots between conductive semiconductor layers or between the conductive layer and the active layer. This nesting approach incorporates the quantum dot functionality without fundamentally restructuring the entire device, thus improving light emitting efficiency while limiting complexity increase
Solution Approach 2:
The quantum dot layer is formed as a distinct, separate layer within the semiconductor structure, segmented from other layers by conductive semiconductor layers. This segmentation allows the quantum dots to be independently optimized for carrier confinement while maintaining clear structural boundaries, resolving the contradiction between enhanced functionality and structural simplicity
2Reliability
If a cap layer is formed to protect the quantum dot layer, then reliability is improved, but manufacturing process becomes more complex
Solution Approach 1:
The cap layer is formed in advance during the semiconductor layer deposition process, before final device assembly. This preliminary formation of the protective cap layer integrates protection into the manufacturing flow itself, improving reliability without requiring separate post-processing steps, thus maintaining ease of manufacture
3Productivity
If quantum dots are uniformly formed on the active layer, then light emitting efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The quantum dot layer is formed by controlling deposition parameters such as thickness, composition, and growth conditions to achieve uniform quantum dot formation. By optimizing these parameters, the patent achieves uniform carrier confinement across the active layer area, improving light emitting efficiency while managing manufacturing precision through parameter control rather than complex process steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases internal light emitting efficiency by uniformly forming quantum dots on or below the active layer, enhancing carrier confinement and supply to the active layer, thereby improving the overall light emission efficiency.
Implementation Method 1
forming a quantum dot layer on or/and below an active layer... creating a roughness that improves carrier confinement
Implementation Method 2
creating a roughness that improves carrier confinement and reduces contact resistance
Implementation Method 3
A III-V group nitride semiconductor has been variously used for an optical device such as blue/green LEDs (light emitting diodes)... can perform high efficient light emission
Data Source
AI summary
A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.