Semiconductor Light Emitting Device Recessed Region Multilayer Insulating Structure
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Solution Overview
Problem
Light emitting diodes face reduced external light extraction efficiency due to light being reflected by the package body surface and incident back onto the device, leading to decreased output and efficiency in applications such as lighting and display devices.
Innovation Solution
A semiconductor light emitting device with a recessed and protruding region structure, a reflective electrode layer, and a multilayer insulating structure with distributed Bragg reflector properties, which includes alternating layers of different refractive indices to enhance light extraction by redirecting and reflecting light away from the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional light emitting diode structure is used, then the device is simple in structure, but external light extraction efficiency is reduced due to light reflection by the package body surface
Solution Approach 1:
The device is divided into distinct functional regions: a protruding region containing the light emitting structure and reflective electrode, and a recessed region filled with insulating material. This segmentation allows the light emitting area to be optimized for light extraction while the recessed region prevents reflected light from re-entering the device, resolving the contradiction between structural simplicity and light extraction efficiency.
Solution Approach 2:
An insulating layer with refractive index different from both the semiconductor layers and the encapsulant is introduced as an intermediary medium in the recessed region. This intermediary prevents light reflected from the package body from re-entering the light emitting diode, thereby improving external light extraction efficiency without significantly complicating the overall structure.
2Loss of energy
If the light emitting diode structure is optimized for light extraction, then external light extraction efficiency is improved, but device complexity increases
Solution Approach 1:
The insulating layer is applied locally only in the recessed region surrounding the light emitting diode, rather than uniformly across the entire device. This localized application provides the necessary optical functionality to improve light extraction efficiency while minimizing the addition of structural complexity.
Solution Approach 2:
The invention introduces a vertical dimension by creating a recessed region below the light emitting diode and filling it with insulating material. This dimensional change allows the prevention of light re-entry without adding horizontal complexity to the light emitting structure itself, thus improving light extraction efficiency with minimal increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly improves external light extraction efficiency by reflecting light incident from the package body back into the device, enhancing the overall output and efficiency of light emitting diodes in various applications.
Implementation Method 1
a multilayer insulating structure covering the first and second conductive patterns, wherein the multilayer insulating layer includes third and fourth openings disposed on the first and second conductive patterns
Implementation Method 2
the multilayer insulating structure includes alternating layers of different refractive indices to enhance light extraction by redirecting and reflecting light away from the device
Implementation Method 3
a reflective electrode layer disposed on the second conductivity-type semiconductor layer
Data Source
AI summary
A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.