Semiconductor Light Emitting Device with Reflective Metal Layer
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in achieving high light extraction efficiency, particularly for ultraviolet light, due to limitations in current designs that do not effectively manage light emission in the horizontal direction.
Innovation Solution
The semiconductor light emitting device incorporates a light emitting stack with a reflective metal layer within conductive vias and trenches, which are connected to conductive lines extending along the edges, allowing for efficient reflection and extraction of light emitted from the active layer in the horizontal direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional light emitting device designs are used, then device simplicity is maintained, but light extraction efficiency in the horizontal direction is insufficient
Solution Approach 1:
The device structure is segmented by introducing trenches that divide the horizontal space into multiple regions. These trenches contain reflective metal layers that segmentarily reflect light from different zones, collectively improving overall light extraction efficiency while maintaining manageable structural complexity
Solution Approach 2:
Reflective metal layers are selectively placed in specific locations (within trenches and contact holes) rather than uniformly throughout the device. This local placement optimizes light reflection in critical areas where horizontal light extraction is most needed, improving efficiency without requiring complex modifications across the entire device structure
2Productivity
If reflective structures are added to improve light extraction, then light extraction efficiency is enhanced, but manufacturing complexity increases
Solution Approach 1:
The reflective metal layers are merged with existing conductive structures (contact holes and trenches) that are already part of the device fabrication process. By combining the light reflection function with existing structural elements, the patent enhances light extraction without requiring entirely new manufacturing processes
Solution Approach 2:
The trenches and contact holes serve dual functions: they provide electrical connectivity (original function) and house reflective metal layers for light extraction enhancement (new function). This multi-functionality allows the same structural elements to address both electrical and optical requirements, simplifying the overall manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly enhances light extraction efficiency by effectively reflecting and directing ultraviolet light emitted from the active layer, improving the overall performance of semiconductor light emitting devices.
Implementation Method 1
a reflective metal layer disposed within the plurality of holes and within the trench... metallic materials reflecting light emitted from the active layer in a horizontal direction
Data Source
AI summary
A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.