Semiconductor Light Emitting Device Rod-Shaped Roughness Layer
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Solution Overview
Problem
Conventional semiconductor light emitting devices face inefficiencies in light emission due to the lack of effective surface structures on electrode contact layers, which hinder the external light output.
Innovation Solution
The formation of a roughness layer in a rod shape on at least one of the first and second electrode contact layers improves light emission efficiency by enhancing the surface characteristics and crystal growth rates, allowing for better light transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional smooth surface structure is used on electrode contact layers, then the device structure is simple and easy to manufacture, but the light emission efficiency is poor due to hindered external light output
Solution Approach 1:
The patent applies curvature by forming rod-shaped protrusions on the electrode contact layers instead of using flat surfaces. These rod-shaped structures with curved surfaces enhance light extraction efficiency by reducing total internal reflection at the interface, allowing more light to escape externally while maintaining manufacturability through standard semiconductor fabrication processes.
Solution Approach 2:
The patent implements local quality by creating rod-shaped protrusions only on specific electrode contact layers where light extraction is needed, rather than modifying the entire device structure. This localized modification optimizes light emission at critical interfaces while keeping other portions of the device simple and easy to manufacture.
2Productivity
If a roughness layer is formed on electrode contact layers to improve light emission, then light transmission is enhanced, but the device structure and fabrication process become more complex
Solution Approach 1:
The patent applies parameter changes by modifying the physical morphology of the electrode contact layer surface, transforming it from a flat surface to one with rod-shaped protrusions. This morphological parameter change enhances light extraction efficiency by altering the optical properties at the interface, while the modification can be achieved through controlled fabrication processes.
Solution Approach 2:
The rod-shaped protrusions with curved surfaces optimize light extraction by reducing total internal reflection. The curvature of these structures allows light rays to escape more effectively compared to flat surfaces, enhancing light emission efficiency without requiring excessively complex device architectures.
3Productivity
If the semiconductor layer thickness is increased to improve crystallinity and light emission, then the light output is enhanced, but the manufacturing process becomes more time-consuming and complex
Solution Approach 1:
The rod-shaped protrusions enhance light extraction efficiency from existing semiconductor layers, reducing the need to increase layer thickness to achieve improved light output. This approach maintains manufacturing time efficiency while still enhancing light emission through optical structure optimization rather than simply adding more material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a roughness layer on the semiconductor light emitting device significantly enhances light emission efficiency by increasing the thickness and crystallinity of the semiconductor layers, leading to improved external light output.
Implementation Method 1
forming a roughness layer comprising a rod shape on the second electrode contact layer... improves the efficiency of emitting light to the outside
Data Source
AI summary
A semiconductor light emitting device including a first electrode contact layer, an active layer formed on the first electrode contact layer, a second electrode contact layer formed on the active layer, and a first roughness layer formed on at least one of the first and second electrode contact layers.