Semiconductor Light Emitting Device Double Frost Process
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in achieving high brightness due to inefficient light extraction, despite methods like frost processes and metallic reflective layers, which do not fully optimize surface roughening for enhanced light emission.
Innovation Solution
A semiconductor light emitting device is developed with a substrate structure and semiconductor layers, including a frost-processed layer formed by multiple wet etching processes to create both coarse and fine uneven surfaces, optimizing light extraction efficiency through a double frost process that enhances the surface roughness and adhesion of the GaAs substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a single frost process is performed on the LED surface, then light extraction efficiency is improved, but brightness optimization is insufficient
Solution Approach 1:
The single frost process is divided into two sequential frost processes: a first frost process that creates initial surface roughness, and a second frost process that enhances the roughness further. This segmentation allows each process to be optimized independently, with the first process creating a base level of light scattering and the second process maximizing light extraction efficiency, thereby resolving the contradiction between brightness and light extraction efficiency.
Solution Approach 2:
The first frost process is performed as a preliminary action before the second frost process. This preliminary roughening creates a surface structure that prepares the LED for the subsequent second frost process, enabling the second process to achieve optimal light extraction efficiency. The preliminary action of the first frost process is essential for the final brightness optimization.
2Productivity
If surface roughness is increased to improve light extraction, then light extraction efficiency improves, but manufacturing complexity increases
Solution Approach 1:
Two separate frost processes are merged into a unified manufacturing sequence that achieves high light extraction efficiency. Rather than using complex multi-step roughening techniques or multiple different processes, the patent combines two frost processes with different duration parameters to achieve the desired surface roughness and light extraction performance, simplifying the overall manufacturing approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves improved brightness and light extraction efficiency by forming a double frost-processed layer with specific etching conditions, increasing the rate of brightness and maintaining high reflectivity, thus overcoming previous limitations in surface roughening techniques.
Implementation Method 1
a first frost process and a second frost process are performed on a surface of the LED device
Data Source
AI summary
A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode.