Semiconductor Light-Emitting Device Electrode Layout

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Solution Overview

Problem

Existing semiconductor light-emitting devices face challenges in optimizing electrode profiles and layouts to enhance electrical characteristics and luminous efficiency while preventing light interference and leakage, which affects the overall light output and color uniformity.

Innovation Solution

The semiconductor light-emitting device incorporates a p-side electrode and an n-side electrode with specific interconnection portions and a supporting body, including metal pillars and a resin layer, to ensure efficient light extraction and distribution, with a fluorescent material layer enhancing optical characteristics and reducing light leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If electrodes are formed on one side of the semiconductor layer, then electrode profile and layout freedom is improved, but light interference and leakage may occur affecting light output and color uniformity

Engineering Contradiction:
Improveelectrode profile and layout freedomVSAvoidlight interference and leakage
Core Design Contradiction:
Adaptability or versatilityVSObject-generated harmful factors

Solution Approach 1:

The electrode structure is segmented into multiple functional parts: a reflective electrode layer, an insulating layer with openings, and transparent conductive layers. This segmentation allows different regions to serve different purposes - reflection, insulation, and light transmission - thereby maintaining electrode functionality while preventing light interference and leakage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulating layer is introduced as an intermediary between the reflective electrode and the light-emitting layer. This intermediary layer with controlled openings prevents direct light interference with the electrode while still allowing necessary electrical connections, thus resolving the conflict between electrode adaptability and light leakage prevention.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If complex interconnection structures are added to prevent light leakage, then light extraction efficiency is improved, but device complexity increases

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidinterconnection structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The insulating layer serves multiple functions simultaneously: it provides electrical insulation, controls light extraction through opening patterns, and supports the transparent conductive layers. This multi-functionality improves light extraction efficiency without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The insulating layer features local variations in thickness and opening patterns tailored to specific regions. Areas requiring high light extraction have optimized opening configurations, while other areas provide structural support or insulation. This localized optimization achieves high light extraction efficiency without uniformly increasing complexity throughout the entire device.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration increases light output, improves uniform current distribution, and prevents color breakup by effectively directing light to the fluorescent material layer, resulting in enhanced light extraction efficiency and reliability.

Implementation Method 1

a fluorescent material layer enhancing optical characteristics

Methodology Applied
Scientific EffectFluorescence: Fluorescence

Implementation Method 2

The second portion is provided in the first n-side region and contacting the first n-side region

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentEP3067943B1Semiconductor light-emitting device
Publication Date: 2020.01.15 ALPAD CORP
  • EP3067943B1 patent drawingFigure 1
  • EP3067943B1 patent drawingFigure 2A~2B
  • EP3067943B1 patent drawingFigure 3A~3C

AI summary

According to one embodiment, the p-side electrode (16) is provided on the second semiconductor layer. The insulating film (18) is provided on the p-side electrode. The n-side electrode (17) includes a first portion (17a), a second portion (17c), and a third portion (17e). The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.