Semiconductor Light-Emitting Element Adhesion via Through Holes
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Solution Overview
Problem
Existing semiconductor light-emitting elements face challenges in face-down mounting due to the step difference between p-pad and n-pad electrodes, which affects adhesion strength, precision, and heat dissipation, and require adjustments in bump heights for proper bonding.
Innovation Solution
A semiconductor light-emitting element configuration featuring a transparent conductive film with through holes exposed by an insulation film, where a protection film contacts the conductive film through these holes, acting as an anchor to enhance adhesion and prevent detachment, while non-conductive through holes in the periphery prevent current diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal bump is used for face-down mounting with a large step between p-pad and n-pad electrodes, then electrical connection is achieved, but adhesion strength decreases and manufacturing complexity increases due to bump height adjustment requirements
Solution Approach 1:
The patent transitions from a planar electrode arrangement to a three-dimensional stacked configuration where both p-pad and n-pad electrodes are positioned on the same surface level by placing them on opposite sides of the semiconductor chip. This dimensional change eliminates the step difference that previously required complex bump height adjustments, while maintaining electrical connection through the chip substrate.
2Manufacturing precision
If the electrode surface is mounted on an external substrate with a large step between pads, then mounting is achieved, but contact precision decreases and heat dissipation is compromised
Solution Approach 1:
By positioning both pad electrodes on the same surface plane through the chip stacking arrangement, the patent enables simultaneous and precise contact with the external substrate. This eliminates the step-induced positioning errors that degraded contact precision, while the direct contact interface improves heat dissipation efficiency.
3Reliability
If through holes are created in transparent conductive film for electrode connection, then electrical connection is improved, but adhesion strength decreases due to potential detachment
Solution Approach 1:
The patent applies a protection film to the outer surface of the transparent conductive film before the through-hole formation process. This preliminary protective action prevents the transparent conductive film from detaching during subsequent manufacturing steps, while still allowing through holes to be created for necessary electrical connections.
Solution Approach 2:
The protection film acts as an intermediary layer between the transparent conductive film and the external environment. It provides mechanical support and adhesion reinforcement to the transparent conductive film, preventing detachment while allowing the through holes to maintain their electrical connection function.
Data Source
AI summary
A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film.The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.