Semiconductor Light Emitting Element Electrode Segmentation
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Solution Overview
Problem
In semiconductor light emitting elements using flip-chip bonding technology, light emission is often concentrated at the center portion, leading to reduced efficiency and increased risk of electro-static-discharge (ESD) damage.
Innovation Solution
A semiconductor light emitting element design featuring laminated semiconductor layers with n-type and p-type semiconductor layers, surrounded by n-side electrodes and a p-side electrode with a reflective property, including an insulating reflection layer and a transparent conductive layer to distribute light emission uniformly and enhance ESD resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the n-side electrode is provided at the center portion of the chip and the p-side electrode is provided at each of four corners of the chip, then the electrical connection is achieved, but light emission is concentrated at the center portion of the chip and light emission efficiency is lowered
Solution Approach 1:
The single n-side electrode at the center is segmented into multiple n-side electrodes distributed around the light emitting layer. This segmentation allows current to be injected at multiple locations, distributing the light emission across the entire chip surface rather than concentrating it at the center, thereby improving light emission efficiency.
Solution Approach 2:
The electrode arrangement transitions from a centralized two-dimensional layout to a distributed three-dimensional configuration where multiple n-side electrodes are positioned at different locations around the light emitting layer, creating a more uniform current distribution and light emission pattern across the chip surface.
2Ease of manufacture
If the n-side electrode is provided at the center portion of the chip, then the electrical connection is achieved, but the chip is apt to be damaged in the electro-static-discharge (ESD) inspection
Solution Approach 1:
The single central n-side electrode is divided into multiple smaller electrodes distributed around the chip. This segmentation reduces the concentration of electrical stress at any single point, distributing the ESD energy across multiple contact points and reducing the likelihood of damage during ESD inspection.
Solution Approach 2:
Different regions of the chip are assigned different electrode functions: multiple n-side electrodes are positioned around the periphery for distributed current injection and ESD protection, while the p-side electrode remains at the center for light extraction. This local differentiation optimizes both electrical performance and ESD resistance.
3Device complexity
If light emission is concentrated at the center portion of the chip, then the electrode configuration is simple, but the light emission efficiency is lowered
Solution Approach 1:
The electrode configuration is segmented into multiple n-side electrodes distributed around the light emitting layer, creating a more complex but effective arrangement that distributes light emission across the chip surface, thereby improving light emission efficiency despite increased configuration complexity.
Solution Approach 2:
The electrode structure uses a composite configuration combining multiple n-side electrodes with different materials or layers (such as reflective layers and transparent conductive layers), creating a multifunctional electrode system that achieves both uniform light emission and improved electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves uniform light emission across the chip surface, improving efficiency and withstanding voltage during ESD inspections, thereby addressing the issues of concentrated light emission and ESD damage.
Implementation Method 1
a p-side electrode that is provided on the p-type semiconductor layer, provided with a reflective property to light outputted from the light emitting layer
Data Source
AI summary
A semiconductor light emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; plural n-side electrodes that are laminated on the n-type semiconductor layer, electrically connected to the n-type semiconductor layer and arranged to surround at least a partial region of the light emitting layer and the p-type semiconductor layer as viewed from a lamination direction; and a p-side electrode that is provided on the p-type semiconductor layer, provided with a reflective property to light outputted from the light emitting layer and electrically connected to the p-type semiconductor layer, the p-side electrode including a connecting portion, which is used for electrical connection with an outside, at a region surrounded by the plural n-side electrodes as viewed from the lamination direction.