Semiconductor Surface Light-Emitting Element with {100} Facet Holes
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Solution Overview
Problem
The formation of holes in a semiconductor layer with specific facet orientations during regrowth leads to poor crystallinity and surface morphology in semiconductor surface light-emitting elements, resulting in high dislocation density and reduced emission output.
Innovation Solution
A semiconductor surface light-emitting element with a photonic crystal layer featuring holes having side faces with four different {100} facets or facets resulting from rotation at angles less than ±35° around the normal line, which improves crystallinity and surface flatness by reducing dislocation formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If holes with specific facet orientations are formed in a semiconductor layer during regrowth, then the photonic crystal structure is created, but poor crystallinity and surface morphology are generated
Solution Approach 1:
The invention changes the orientation parameter of the hole side faces from conventional facets to {100} facets or facets rotated less than ±35° around the normal line. This parameter change in facet orientation fundamentally alters the regrowth behavior, enabling high crystallinity while maintaining the photonic crystal structure.
Solution Approach 2:
The invention introduces asymmetric facet orientations in the hole structure, specifically using {100} facets or rotated facets that create non-uniform growth conditions during regrowth. This asymmetry in facet orientation prevents dislocation formation while maintaining the periodic photonic crystal pattern.
2Stability of the object's composition
If regrowth of crystal is performed in holes, then the photonic crystal layer is formed, but large dislocations are generated inside the crystal
Solution Approach 1:
The invention changes the critical parameter of facet orientation to {100} facets or facets with rotation angles less than ±35°. This parameter change transforms the regrowth process from one that generates dislocations to one that maintains high crystallinity and reliability.
Solution Approach 2:
The invention converts the potentially harmful effect of regrowth-induced dislocations into a beneficial process by carefully selecting facet orientations. The controlled facet orientation guides the regrowth to proceed in a manner that eliminates dislocation formation while maintaining the photonic crystal structure.
3Ease of manufacture
If conventional facet orientations are used in hole formation, then the manufacturing process is simplified, but surface flatness deteriorates
Solution Approach 1:
The invention changes the facet orientation parameter to {100} facets or rotated facets, which naturally guide the regrowth process to produce flat surfaces. This parameter change achieves surface flatness without significantly complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the crystallinity and emission properties of the semiconductor surface light-emitting element, increasing lifetime and luminous efficiency while minimizing dislocations and improving heat resistance.
Implementation Method 1
A regrowth type PCSEL using regrowth of crystal is offered as 2DPC fabrication means to solve the above problems
Implementation Method 2
When the 2DPC layer is perfectly embedded, the coupling coefficient κ thereof becomes reduced to about 1/10 of the coupling coefficient in the case of the wafers being bonded
Data Source
AI summary
A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.