Semiconductor Light Emitting Element Hole Structure
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Solution Overview
Problem
Existing semiconductor light emitting elements, such as LEDs, face inefficiencies due to excessive area consumption by insulating layers, which reduces light emitting area and increases forward-bias voltage, leading to heat generation and reduced power efficiency.
Innovation Solution
A semiconductor light emitting element structure that eliminates unnecessary insulating layer margins around holes, allowing for increased contact area between conducting layers and semiconductor layers, and uses a light-transmitting conducting layer configuration with a matrix pattern of holes to enhance light output and reduce forward-bias voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulating layers are added around holes to provide electrical isolation, then reliability is improved, but area of stationary object is reduced
Solution Approach 1:
The patent extracts the insulating layer from the critical light-emitting region. Specifically, the insulating layer is positioned only on the upper surface of the second semiconductor layer, excluding the region around the hole where light emission occurs. This separation allows electrical isolation to be maintained while preserving the light emitting area.
Solution Approach 2:
The patent transitions the insulating layer from a two-dimensional planar structure to a three-dimensional stepped structure. The insulating layer is formed with different thickness regions: a first thickness on the upper surface and a second, greater thickness in the region around the hole. This dimensional change allows the insulating layer to provide electrical isolation vertically while minimizing horizontal occupation of the light emitting area.
2Manufacturing precision
If insulating layer margins are increased to ensure coverage, then manufacturing precision is improved, but area of stationary object is reduced
Solution Approach 1:
The patent applies different insulating layer thicknesses at different locations. The insulating layer has a first thickness in regions where electrical isolation is critical and a second, greater thickness in regions around the holes where enhanced coverage provides manufacturing margin. This local differentiation ensures adequate coverage without uniformly reducing the light emitting area.
3Loss of energy
If conducting layer contact area is increased to reduce forward-bias voltage, then power efficiency is improved, but device complexity is increased
Solution Approach 1:
The patent segments the conducting layer contact regions into multiple discrete contact areas around the hole periphery. Instead of a single large contact area, the conducting layer makes contact at multiple distributed points along the hole's circumference. This segmentation increases the total contact area with the first semiconductor layer, reducing forward-bias voltage and improving power efficiency, while the modular nature of the segmented contacts simplifies the overall configuration compared to complex multi-layer structures.
Data Source
AI summary
A semiconductor light emitting element includes a first semiconductor layer, an active layer, a second semiconductor layer, a first conducting layer, a second conducting layer, and an insulating layer. The insulating layer is disposed at least on or above the upper surface of the second conducting layer. Holes are opened at given intervals through the second semiconductor layer to expose the first semiconductor layer at bottom surfaces of the holes. In each of the holes, the insulating layer covers from a side-wall surface of each of the holes to a first region provided on or above the upper surface of the second conducting layer around a top of each of the holes. The first conducting layer covers from the bottom surface of each of the holes to a second region provided over the second conducting layer and the insulating layer around the top of each of the holes.