Semiconductor Light Emitting Element Manufacturing Method
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Solution Overview
Problem
The manufacturing of semiconductor light emitting elements faces challenges with metal migration during the formation of electrodes, particularly with Ag, which can cause short circuits between n-type and p-type semiconductor layers, and existing methods either prevent migration by canceling potential differences or generate particles during conductor layer removal.
Innovation Solution
A method involving forming a semiconductor stacked layer body with a conductor layer connecting the n-type and p-type semiconductor layers to cancel potential differences, preventing migration and avoiding conductor layer etching, thus eliminating short circuits and particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Ag is used as electrode material to improve conductivity and reflectance, then luminous efficiency is improved, but metal migration occurs causing short circuits
Solution Approach 1:
The patent applies equipotentiality by forming a conductor layer that electrically connects the n-type and p-type semiconductor layers, equalizing their potentials. This eliminates the potential difference that drives metal migration, allowing Ag electrodes to be used without causing short circuits. The conductor layer acts as an intermediate that balances the electrical potential between the two semiconductor layers with different conductivity types.
2Reliability
If conductor layer is removed by etching to eliminate short circuit, then reliability is improved, but particles are generated requiring further improvement
Solution Approach 1:
The patent applies the extraction principle by selectively removing the conductor layer only from specific regions where it is not needed, while preserving it in regions where it prevents metal migration. This is achieved through selective etching or selective formation processes that extract the conductor layer from electrode formation areas while maintaining it in potential equalization areas, thus preventing short circuits without generating excessive particles.
Solution Approach 2:
The patent applies local quality by making the conductor layer's presence or absence location-dependent. In some regions, the conductor layer is maintained to prevent metal migration, while in other regions it is removed to allow proper electrode formation. This spatially differentiated approach ensures short circuit prevention without unnecessary particle generation from widespread etching.
3Object-affected harmful factors
If potential difference is canceled to prevent metal migration, then metal migration is prevented, but short circuit occurs between n-type and p-type layers
Solution Approach 1:
The patent applies segmentation by dividing the conductor layer into distinct regions with different functions. One region serves to equalize potential and prevent metal migration, while another region is designed to be removed or isolated to prevent short circuits. This segmentation allows the conductor layer to simultaneously provide potential equalization without causing harmful short circuits between the n-type and p-type semiconductor layers.
Data Source
AI summary
A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.