Semiconductor Light-Emitting Element Manufacturing Method

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Solution Overview

Problem

Conventional semiconductor light-emitting elements experience insufficient light-emitting output due to defects in the p-type semiconductor layer caused by dopants during the formation of the n-type semiconductor layer, and the effect of increasing current on light-emitting output diminishes as current levels rise.

Innovation Solution

A semiconductor light-emitting element manufacturing method involving the sequential lamination of a first n-type semiconductor layer, a regrowth layer, a second n-type semiconductor layer, and a p-type semiconductor layer in separate organometallic chemical vapor deposition apparatuses, with specific growth conditions and structures to prevent dopant-induced defects and enhance crystallinity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially and continuously laminated in the same deposition chamber, then the manufacturing process is simple and continuous, but the dopant used when forming the n-type semiconductor layer hinders formation of the p-type semiconductor layer, preventing sufficiently low resistivity

Engineering Contradiction:

Improvemanufacturing process continuityVSAvoidp-type semiconductor layer resistivity

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The manufacturing process is divided into two separate deposition chambers: a first deposition chamber for forming the n-type semiconductor layer, and a second deposition chamber for forming the p-type semiconductor layer. This segmentation prevents dopant contamination from the n-type layer formation process, enabling the p-type layer to achieve sufficiently low resistivity while maintaining process continuity through sequential chamber operations.

Inventive Principle:

Principle #1Segmentation

2Manufacturing precision

If the deposition chamber for n-type semiconductor layer and the deposition chamber for p-type semiconductor layer are completely separated, then dopant-induced defects in the p-type layer are prevented, but the light-emitting output of the obtained semiconductor light-emitting element becomes insufficient

Engineering Contradiction:

Improvep-type semiconductor layer qualityVSAvoidlight-emitting output

Core Design Contradiction:

Manufacturing precisionVSPower

Solution Approach 1:

An intermediate layer is formed in the second deposition chamber before forming the p-type semiconductor layer. This intermediate layer serves as a preparation step that improves the crystallinity and quality of the subsequent p-type layer, enabling both high-quality defect-free layers and sufficient light-emitting output when large currents are applied.

Inventive Principle:

Principle #10Preliminary action

3Power

If a large volume of current is applied to enhance light-emitting output, then the light-emitting output increases, but the effect of light-emitting-output enhancement gradually declines as applied current increases

Engineering Contradiction:

Improvelight-emitting outputVSAvoiddiminishing return on current increase

Core Design Contradiction:

PowerVSLoss of energy

Solution Approach 1:

The invention optimizes the crystallinity and structural quality of the semiconductor layers through controlled deposition processes in separate chambers and the introduction of an intermediate layer. These parameter changes in layer quality enable the device to maintain higher efficiency and light-emitting output even when large currents are applied, delaying the onset of diminishing returns.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method inhibits defects in the p-type semiconductor layer and achieves higher light-emitting output, particularly when a large current is applied, improving productivity and light-emitting performance.

Implementation Method 1

a first n-type semiconductor layer is laminated onto a substrate in a first organometallic chemical vapor deposition apparatus, and a regrowth layer of the first n-type semiconductor layer, a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially laminated onto the first n-type semiconductor layer in a second organometallic chemical vapor deposition apparatus

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS8896085B2Semiconductor light-emitting element manufacturing method, lamp, electronic equipment, and mechanical apparatus

Publication Date: 2014.11.25 TOYODA GOSEI CO LTD

AI summary

A semiconductor light-emitting element manufacturing method including: a first step in which a first n-type semiconductor layer is laminated onto a substrate in a first organometallic chemical vapor deposition apparatus; and a second step in which a regrowth layer, a second n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially laminated onto the aforementioned first n-type semiconductor layer in a second organometallic chemical vapor deposition apparatus.