Semiconductor Light Emitting Element With Modified Substrate Layer
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Solution Overview
Problem
The manufacturing process of semiconductor light emitting elements is costly due to the need for a back aligner to remove the light reflective layer, and the partial absence of this layer leads to reduced brightness as light is emitted externally through uncovered areas.
Innovation Solution
A method involving the formation of a modified layer by selectively irradiating laser light on a wafer to create a cutting point, followed by the deposition of a light reflective layer covering the entire opposite surface, allowing the wafer to be divided and eliminating the need for a back aligner, thus ensuring the light reflective layer covers the entire surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a back aligner is used to remove the light reflective layer, then the light reflective layer can be selectively removed, but the cost of facility investment and manufacturing cost increases
Solution Approach 1:
The modified layer is formed in advance before the light reflective layer is deposited. This preliminary action creates a predetermined cutting point that enables subsequent easy separation, eliminating the need for expensive back aligner equipment to remove the light reflective layer later.
Solution Approach 2:
The wafer is divided into individual light emitting devices using the modified layer as a cutting point. This segmentation approach allows the light reflective layer to be separated together with the substrate, eliminating the need for selective removal of the light reflective layer while reducing manufacturing costs.
2Ease of manufacture
If the light reflective layer is formed to expose the edge portion of the rear surface, then the manufacturing process is simplified, but light is emitted externally through uncovered areas reducing brightness
Solution Approach 1:
The modified layer is formed in advance at positions spaced apart from the light emitting layer toward the rear surface. This preliminary action creates predetermined cutting points that allow the light reflective layer to be fully formed without requiring subsequent selective removal, ensuring complete light reflection while maintaining manufacturing simplicity.
Solution Approach 2:
The modified layer is formed at specific locations (spaced apart from the light emitting layer) rather than uniformly across the entire wafer. This localized modification enables precise cutting points that preserve the light reflective layer's integrity while allowing efficient wafer division, solving both brightness and manufacturing simplicity requirements.
3Ease of manufacture
If the light reflective layer is completely removed, then the manufacturing process is simplified, but light is lost through the rear surface reducing efficiency
Solution Approach 1:
The modified layer is formed in advance to create predetermined cutting points before the light reflective layer is deposited. This allows the light reflective layer to be completely formed without subsequent removal, preventing light loss while maintaining manufacturing simplicity through the preliminary modification step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and enhances brightness by ensuring all light is reflected back to the semiconductor layer, improving the overall efficiency of the light emitting element.
Implementation Method 1
selectively irradiating laser light from the second surface of the wafer with a light concentration point aimed at a region spaced apart from the first surface toward the second surface in the wafer so as to alter a material forming the wafer
Implementation Method 2
forming a light reflective layer, which is configured to reflect the light generated by the semiconductor layer toward the semiconductor layer
Data Source
AI summary
A semiconductor light emitting element is disclosed. The element includes a substrate including a first surface, a second surface opposite to the first surface, and a side surface that connects the first surface and the second surface; a semiconductor layer formed on the first surface of the substrate and configured to generate light; and a light reflective layer formed on the second surface of the substrate to cover an entire region of the second surface of the substrate and configured to reflect the light generated by the semiconductor layer toward the semiconductor layer. A modified layer, which has a physical property different from that of the other portion of the substrate, is formed on the side surface of the substrate to be spaced apart from the first surface toward the second surface by altering a material forming the substrate.