Semiconductor Light Emitting Element Protrusions Recesses

The patent applies local quality by creating protrusions and recesses at specific locations on the side surfaces of the semiconductor light emitting element. These localized structural modifications are concentrated on the light-emitting side surfaces while maintaining simplicity elsewhere, thereby improving light distribution stability without significantly complicating the overall manufacturing process.

The patent transitions from a two-dimensional inclined surface to a three-dimensional surface with protrusions and recesses. By adding vertical dimensionality to the side surfaces through these structural features, the patent achieves more stable light distribution characteristics while maintaining manufacturing feasibility through standard semiconductor processing techniques.

The patent employs parameter changes by systematically varying the dimensions, spacing, and distribution patterns of protrusions and recesses on the side surfaces. By optimizing parameters such as protrusion height, recess depth, and their periodic arrangement, the patent achieves stable light distribution while controlling structural complexity through quantifiable design parameters.

The patent applies segmentation by dividing the side surfaces into multiple discrete protrusion and recess regions rather than creating a continuous complex structure. This segmentation allows each feature to be independently formed using standard photolithography and etching processes, thereby reducing overall manufacturing complexity while achieving the desired light distribution stability.