Semiconductor Light-Emitting Element With Random Net Base Segments
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Solution Overview
Problem
Semiconductor light-emitting elements face challenges in achieving uniform light-emitting wavelength, high color rendering properties, and high light-emitting intensity without the use of wavelength conversion components like phosphors, due to issues with manufacturing complexity and crystallinity deterioration.
Innovation Solution
A semiconductor light-emitting element structure comprising a first semiconductor layer, a first light-emitting layer with a base layer subject to stress strain and partitioned by grooves into a random net shape, and a second light-emitting layer with a quantum well structure layer, where the second light-emitting layer retains the segment shape of the first light-emitting layer's surface, allowing for a wide spectral width and high intensity without the need for phosphors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If phosphors are used to achieve wide spectral width and high color rendering properties, then the light-emitting element can emit white light covering the entire visible region, but the device complexity and manufacturing process complexity increase
Solution Approach 1:
The invention extracts and eliminates the phosphor component from the light-emitting element structure. Instead of using phosphors to convert light wavelengths, the patent directly generates broad-spectrum light through the active layer's quantum well structure with controlled composition gradients, thereby achieving wide spectral width without increasing device complexity
Solution Approach 2:
The invention employs composite semiconductor materials with varying compositions (e.g., InGaN layers with different indium concentrations) within the active layer to achieve broad light emission across the visible spectrum. This composite material approach replaces the need for separate phosphor materials while maintaining structural simplicity
2Illumination intensity
If etching processing is applied to the semiconductor layer to modify the active layer surface, then the light-emitting wavelength can be widened, but the crystallinity of the semiconductor layer deteriorates
Solution Approach 1:
The invention performs preliminary action by forming the composition gradient and quantum well structure within the active layer during the semiconductor layer growth process itself, before any light emission occurs. This preliminary structuring of indium concentration gradients enables broad-spectrum emission without requiring subsequent etching that would damage crystallinity
Solution Approach 2:
The invention replaces the mechanical etching process with a compositional gradient approach. Instead of physically removing material to widen emission wavelength, the patent uses controlled variation in indium concentration within the quantum well structure to achieve the same effect while preserving the intact crystalline structure
3Ease of manufacture
If the active layer uses a single composition to maintain manufacturing simplicity, then the manufacturing process is simple, but the light-emitting wavelength is limited and cannot cover the entire visible region
Solution Approach 1:
The invention applies local quality by creating spatial variation in indium concentration within the active layer's quantum well structure. Different regions of the active layer have different compositions (gradual increase in indium concentration), enabling each region to emit at different wavelengths, collectively covering the entire visible spectrum while using a single continuous growth process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a semiconductor light-emitting element to emit light with a wide wavelength range across the visible region, achieving high color rendering properties and high light-emitting intensity, while avoiding the complexities and inefficiencies associated with phosphor-based methods.
Implementation Method 1
a base layer that has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned by grooves into a random net shape
Implementation Method 2
Emission of light by a semiconductor light-emitting element is induced when binding (recombination) of an electron and a hole injected into the element through electrodes occurs in the active layer of the element
Implementation Method 3
a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer and formed on the base layer, the first quantum well structure layer retaining segment shapes of the plurality of base segments
Data Source
Figure 1(a)~1(b)
Figure 2~3
Figure 4
AI summary
A semiconductor light-emitting element includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer has: a base layer that has a composition subject to stress strain from a first semiconductor layer and has a plurality of base segments that are partitioned into a random net shape; and a first quantum well structure layer composed of at least one quantum well layer formed on the base layer and at least one barrier layer, wherein the at least one quantum well layer retains the segment shapes of the plurality of base segments. The second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer, and the second light-emitting layer has a groove, which retains the segment shape, in a surface of an end barrier layer located closest to the first light-emitting layer among the plurality of barrier layers.