Semiconductor Light-Emitting Element with Side-Extended Tunnel Junction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor light-emitting elements face challenges in increasing carrier concentration in p-type layers and p+ layers due to hydrogen atoms, which hinders carrier injection and current density improvement.
Innovation Solution
A semiconductor light-emitting element with a p-type embedded semiconductor layer and a tunnel junction layer formed on the side surface of a mesa structure, where the tunnel junction layer extends to the side surface, allowing for hydrogen desorption and improved activation of p-type impurities, facilitating better current diffusion and carrier injection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the p-type layer and p+ layer are embedded in the n-type semiconductor layer, then the structure is compact and manufacturing is simplified, but the carrier concentration cannot be increased due to hydrogen atoms hindering activation
Solution Approach 1:
The invention changes the geometric configuration from a fully embedded structure to one where the p-type layer and p+ layer extend to the side surface, creating a new spatial dimension for activation. This allows hydrogen desorption to occur at the side surface during heat treatment, resolving the contradiction by maintaining manufacturing simplicity while enabling carrier concentration increase through side-surface exposure.
2Device complexity
If the tunnel junction layer is formed only on the upper surface, then the structure is simpler, but current diffusion and carrier injection are insufficient
Solution Approach 1:
The tunnel junction layer is extended from the upper surface to the side surface of the mesa structure, utilizing the vertical dimension to enhance current diffusion and carrier injection. This configuration increase allows the layer to contact both the p-type layer and p+ layer at the side surface, improving electrical performance without significantly increasing structural complexity.
Solution Approach 2:
The tunnel junction layer is strategically positioned to extend to the side surface where it contacts the activated p-type regions, creating a localized high-quality interface for carrier injection. This local optimization enhances current density specifically at the critical injection points without requiring complex restructuring throughout the entire device.
3Stability of the object's composition
If hydrogen atoms remain in the p-type layer and p+ layer, then the structure is stable during manufacturing, but carrier injection is hindered
Solution Approach 1:
The structure is designed with the p-type layer and p+ layer extending to the side surface before final assembly, preparing the configuration for subsequent heat treatment. This preliminary structural arrangement enables efficient hydrogen desorption during activation processing, resolving the contradiction by maintaining manufacturing stability while enabling effective carrier injection through pre-configured side-surface exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the activation rate of p-type impurities, leading to improved current diffusion and carrier injection, thereby increasing the current density and light output of the semiconductor light-emitting element.
Implementation Method 1
hydrogen atoms contained in the p-type layer and the p+ layer and activating p-type impurities
Implementation Method 2
favorable current diffusion and carrier injection
Data Source
AI summary
A semiconductor light-emitting element includes a growth substrate, a plurality of columnar semiconductor layers formed on the growth substrate, a p-type embedded semiconductor layer that is in contact with side surfaces of the plurality of columnar semiconductor layers and that covers the columnar semiconductor layers, a tunnel junction layer formed on the embedded semiconductor layer, and an n-type semiconductor layer formed on the tunnel junction layer. A mesa structure is formed in the embedded semiconductor layer, the tunnel junction layer, and the n-type semiconductor layer. The tunnel junction layer is formed to extend up to a side surface of the mesa structure.