Semiconductor Light Emitting Device Groove Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor laser elements experience heat dissipation issues due to the use of Pt in guide portions, which has lower thermal conductivity than AlN, leading to potential catastrophic optical damage (COD) and solder protrusion near the emission surface.
Innovation Solution
A semiconductor light emitting device with a semiconductor multilayer structure featuring grooves along mounting electrodes, where the bonding material is guided into these grooves, reducing protrusion and enhancing heat dissipation by allowing heat to dissipate both perpendicular and inclined to the mounting surface, and incorporating Au layers for improved wettability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Pt is embedded in guide portions to suppress solder protrusion, then solder wettability is improved, but thermal conductivity is degraded
Solution Approach 1:
The patent applies local quality by making the guide portions have a layered structure: Pt layer at the surface for solder wettability, and AlN substrate for thermal conductivity. This allows different regions of the guide portion to have different properties - the surface layer optimizes for soldering while the bulk material optimizes for heat dissipation.
Solution Approach 2:
The guide portions are constructed as composite materials combining Pt and AlN. The Pt layer provides excellent solder wettability while the AlN substrate provides high thermal conductivity. This composite structure resolves the contradiction by integrating the benefits of both materials in a single component.
2Power
If high-output semiconductor laser element is used, then light output is increased, but heat generation increases causing COD
Solution Approach 1:
The patent introduces AlN heat dissipation layers and Au heat dissipation layers as intermediary structures between the semiconductor laser element and the mounting substrate. These intermediary layers serve as thermal pathways that conduct heat away from the high-output laser element, preventing temperature buildup that would cause COD while allowing the laser to operate at high power levels.
Solution Approach 2:
The heat dissipation function is segmented into multiple independent layers (AlN heat dissipation layer, Au heat dissipation layer) rather than relying on a single material. This segmentation allows each layer to be optimized for its specific function and provides multiple thermal pathways for heat removal, enhancing the system's ability to handle high power output.
3Manufacturing precision
If solder is spread thinly over guide portions, then solder protrusion is suppressed, but heat dissipation path is blocked
Solution Approach 1:
The guide portions have localized Pt surface layers that control solder spreading behavior. The Pt layer's high surface energy promotes uniform solder distribution and prevents excessive solder flow, while the underlying AlN maintains thermal conductivity. This local quality control allows precise solder distribution without compromising heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses solder protrusion and enhances heat dissipation near the emission surface, preventing COD and maintaining high thermal conductivity, thus ensuring efficient operation of high-output semiconductor light emitting devices.
Implementation Method 1
one or more grooves are formed in the opposite surface of the semiconductor multilayer structure to extend along the one or more mounting electrodes in the direction of emission
Implementation Method 2
Pt arranged in guide portions 1021 has lower thermal conductivity than AlN. Hence, Pt is embedded in submount 1020, and thus heat dissipation properties in the vicinity of the emission surface of semiconductor laser element 1001 are degraded.
Data Source
AI summary
Semiconductor light emitting device includes semiconductor light emitting element and submount that includes mounting surface, semiconductor light emitting element includes: semiconductor multilayer structure that includes opposite surface opposite mounting surface and emission surface; and mounting electrode that is arranged on opposite surface and extends in a direction of emission of light, emission surface is located outside of an end portion of mounting surface, groove is formed in opposite surface of semiconductor multilayer structure to extend along mounting electrode in the direction of emission, and a first distance between emission surface and groove is greater than zero and less than a second distance between emission surface and mounting surface.