Semiconductor Light Emitting Device Groove Electrodes
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Solution Overview
Problem
Conventional semiconductor light emitting devices face issues with light extraction efficiency due to electrode blocking and reflection losses, leading to reduced luminous efficiency and reliability.
Innovation Solution
A semiconductor light emitting device with a structure that includes a first and second semiconductor layer, grooves extending through the layers for ohmic electrodes, an insulating layer, and a reflective metal layer to minimize electrode coverage and enhance light extraction, along with a support body bonded via a junction layer, improving current spread and light output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If electrodes are provided on the light extraction surface side, then current injection is achieved, but light emission is blocked and light extraction efficiency is reduced
Solution Approach 1:
The electrode structure is segmented into multiple components: a reflective electrode on the opposite side, a transparent conductive layer on the light extraction surface, and intermediate conductive layers. This segmentation allows current injection functionality to be distributed while minimizing light blocking, as the transparent conductive layer has reduced optical absorption compared to conventional electrodes.
Solution Approach 2:
A transparent conductive layer serves as an intermediary between the light emitting layer and the external environment. This intermediary layer enables electrical contact for current injection while maintaining optical transparency, allowing light to pass through with minimal absorption and reflection losses.
2Illumination intensity
If a reflective mirror is provided on the opposite side, then light output is improved, but device complexity increases
Solution Approach 1:
The reflective electrode is merged with the electrical contact structure on the opposite side. The same conductive layer that serves as an electrical contact also functions as a reflective mirror, combining two functions into a single component and reducing overall device complexity.
Solution Approach 2:
The conductive layers in the device serve multiple functions simultaneously: electrical contact for current injection, light reflection to enhance output, and structural support. This multi-functionality reduces the need for separate components and simplifies the overall device structure.
3Illumination intensity
If current density is increased to improve luminous efficiency, then light emission intensity increases, but carrier overflow occurs and luminous efficiency decreases
Solution Approach 1:
The device structure enables dynamic current distribution through the transparent conductive layer and intermediate conductive layers. This dynamic distribution allows current to spread more uniformly across the light emitting layer, preventing localized carrier overflow while maintaining high overall current density for intense light emission.
Solution Approach 2:
The introduction of transparent conductive layers changes the electrical and optical parameters of the device. These parameter changes enable better control over current density distribution and reduce carrier overflow effects, allowing the device to operate at higher current densities without sacrificing luminous efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances light extraction efficiency, reduces carrier overflow, and achieves high luminous efficiency and reliability with improved light output linearity, minimizing losses from electrode blocking and reflection.
Implementation Method 1
a reflective metal layer to minimize electrode coverage and enhance light extraction
Implementation Method 2
a first ohmic electrode formed in contact with the first semiconductor layer in the first groove; a second ohmic electrode formed in contact with the second semiconductor layer in the second groove
Implementation Method 3
a light emitting layer, and a second semiconductor layer of a conductivity type opposite to that of the first semiconductor layer sequentially laid one over another
Data Source
AI summary
A semiconductor light emitting device comprises a first groove extending to a first semiconductor layer from a second semiconductor layer side through the second semiconductor layer and a light emitting layer; a first ohmic electrode formed in contact with the first semiconductor layer in the first groove; an insulating layer covering a surface of the second semiconductor layer and at least the surface of part of the light emitting layer exposed in the first groove; a metal layer covering the surface of the insulating layer and connected to the first ohmic electrode; a second groove extending from a first semiconductor layer side through the first semiconductor layer and the light emitting layer to the second semiconductor layer; a second ohmic electrode formed in contact with the second semiconductor layer in the second groove; and a support body bonded to the metal layer via a junction layer.