Semiconductor Light Emitting Element Hydrogen Storage Metal Layer
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Solution Overview
Problem
Semiconductor light emitting elements face reliability issues and increased voltage due to hydrogen occlusion in the p-side contact electrode and emission into the semiconductor layer during the plating process, leading to crystal structure deterioration and contact resistance increases, which are difficult to completely remove and can cause thermal damage.
Innovation Solution
Incorporating a hydrogen storage metal layer between the plated layer and the electrode layer to occlude hydrogen generated during plating, preventing its intrusion into the electrode and reducing the voltage required to drive the semiconductor light emitting element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a plated layer is formed by electroplating or electroless plating to improve heat radiation efficiency, then heat radiation efficiency is improved, but hydrogen is generated and occluded into the plated film which then intrudes into the electrode layer causing crystal structure deterioration and contact resistance increase
Solution Approach 1:
A barrier layer made of metal nitride (such as titanium nitride, tantalum nitride, or tungsten nitride) is introduced as an intermediary between the plated layer and the electrode layer. This barrier layer effectively blocks hydrogen intrusion from the plated layer into the electrode layer, preventing crystal structure deterioration and contact resistance increase, while allowing the plated layer to maintain its heat radiation function.
2Object-generated harmful factors
If hydrogen is expelled from the plated film by heat treatment, then hydrogen removal is achieved, but thermal damage to the semiconductor light emitting element may occur and second hydrogen adsorption may happen in subsequent manufacturing processes
Solution Approach 1:
Instead of removing hydrogen after it has been occluded in the plated layer, the invention takes preliminary action by introducing a barrier layer before hydrogen intrusion occurs. This preventive approach eliminates the need for subsequent heat treatment to expel hydrogen, avoiding thermal damage to the semiconductor element and the risk of second hydrogen adsorption in later manufacturing processes.
3Reliability
If the metal layer containing hydrogen storage metal is added between the plated layer and the electrode layer to prevent hydrogen intrusion, then electrode reliability is improved, but the device structure becomes more complex
Solution Approach 1:
The barrier layer is applied locally only where hydrogen intrusion is problematic - specifically between the plated layer and the electrode layer. This localized approach provides targeted protection against hydrogen damage without unnecessarily complicating the entire device structure, maintaining simplicity in regions where it is not needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents hydrogen intrusion, improving the reliability of the semiconductor light emitting element by maintaining the crystal structure and reducing contact resistance, while also simplifying the manufacturing process and avoiding heat-induced damage.
Implementation Method 1
a metal layer that contains a hydrogen storage metal... hydrogen generated in formation of the plated layer is occluded into the hydrogen storage metal contained in the metal layer
Implementation Method 2
it is possible to increase the heat capacity of the heat radiation layer to increase heat radiation efficiency thereof by increasing the thickness of the heat radiation laser
Data Source
AI summary
There is provided a semiconductor light emitting element that is excellent in reliability and is capable of being driven by a lower voltage and a semiconductor light emitting device that includes the semiconductor light emitting element. The semiconductor light emitting element includes: a semiconductor layer; an electrode layer; a metal layer that contains a hydrogen storage metal; and a plated layer in order.