Semiconductor Light Emitting Device Insulating Protrusion
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in enhancing light extraction efficiency and preventing short circuits due to humidity exposure, particularly in the outer regions of the light emitting structure.
Innovation Solution
The implementation of an insulating layer with protrusions along the circumference of the light emitting structure, which electrically isolates the active and inactive regions, and a reflecting layer on the outer wall to improve quantum efficiency and protect against humidity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating layer is added along the circumference of the light emitting structure, then short circuit prevention and reliability are improved, but device complexity increases
Solution Approach 1:
The insulating layer is segmented into a protrusion portion that extends into the inactive region and a main body portion, creating distinct functional zones. This segmentation allows the insulating layer to effectively isolate the active region from the inactive region while maintaining a manageable structural complexity through defined geometric divisions.
Solution Approach 2:
The insulating layer acts as an intermediary element between the active region and the inactive region. By positioning the protrusion portion within the inactive region, it creates an electrical barrier that prevents current leakage and short circuits without interfering with the light emission function of the active region.
2Loss of energy
If the active region is isolated from the inactive region, then light extraction efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The insulating layer exhibits local quality by having different geometries in different regions: the protrusion portion extends into the inactive region to provide electrical isolation, while the main body portion covers the active region to enhance light extraction. This localized differentiation optimizes both isolation efficiency and light extraction without requiring extreme manufacturing precision across the entire structure.
Solution Approach 2:
The insulating layer utilizes the vertical dimension by extending the protrusion portion downward into the inactive region, creating three-dimensional isolation. This vertical extension provides effective electrical barrier functionality while the horizontal coverage of the main body portion addresses light extraction, thereby solving multiple functions through dimensional differentiation.
3Loss of energy
If a reflecting layer is added on the outer wall, then quantum efficiency is improved, but device complexity increases
Solution Approach 1:
The reflecting layer is merged with the outer wall structure of the light emitting device, forming an integrated component rather than a separate additive element. This merging approach enhances quantum efficiency by reflecting photons back into the active region while minimizing additional structural complexity through unified design.
Solution Approach 2:
The outer wall structure serves multiple functions: it provides mechanical support, and when equipped with the reflecting layer, it also functions as a photon reflector to improve quantum efficiency. This multi-functionality reduces the need for separate components, thereby limiting the increase in device complexity while achieving enhanced optical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light extraction efficiency, prevents short circuits, and maintains the active region's integrity by isolating it from the outer, inactive region, thereby improving the reliability and performance of the semiconductor light emitting device.
Implementation Method 1
an insulating layer along the circumference of the top surface of the light emitting structure
Implementation Method 2
a reflecting layer on the outer wall of an inactive region of a light emitting structure
Data Source
AI summary
A semiconductor light emitting device includes a conductive support member; a light emitting structure under the conductive support member; an insulating layer including a protrusion disposed along an outer circumference of the light emitting structure; an electrode layer having an outer portion on the insulating layer and an inner portion on an inner portion of a top surface of the light emitting structure; and an electrode under the light emitting structure, wherein the inner portion of the electrode layer is protruded to the light emitting structure relative to the outer portion of the electrode layer, and wherein a portion of the insulating layer surrounds a portion of the light emitting structure.