Semiconductor Light Emitting Device Metal Heat Dissipation
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Solution Overview
Problem
Semiconductor light emitting devices grown on sapphire substrates suffer from poor heat dissipation characteristics, leading to reduced long-term reliability when operated at high current densities due to low thermal conductivity.
Innovation Solution
Incorporating a metal layer with high melting point metals like Mo, Nb, Os, Re, Pd, W, Ta, Cr, Hf, Rh, and Zr within the n-type semiconductor layer, which can be patterned or have a multilayer structure, to enhance heat dissipation and current spreading efficiency, while also blocking dislocations and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a sapphire substrate is used for growing semiconductor layers, then the device structure is simple and manufacturing is easier, but heat dissipation characteristics deteriorate due to low thermal conductivity
Solution Approach 1:
The patent applies composite materials by integrating a metal layer (such as Mo, Nb, Os, Re, Pd, W, Ta, Cr, Hf, Rh, or Zr) within the semiconductor structure on top of the sapphire substrate. This creates a hybrid system combining the manufacturing advantages of sapphire with the superior thermal conductivity of metal, thereby improving heat dissipation while maintaining ease of manufacture.
2Temperature
If a metal layer is added to improve heat dissipation, then thermal conductivity improves, but device structure becomes more complex
Solution Approach 1:
The patent applies local quality by placing the metal layer specifically within the semiconductor structure at strategic locations rather than uniformly throughout the entire device. The metal layer is positioned to contact specific semiconductor regions, providing localized thermal management where heat generation is highest, thereby improving heat dissipation without unnecessarily complicating the overall device structure.
3Temperature
If the metal layer is placed closer to the active layer to improve heat dissipation, then thermal conductivity improves, but dislocation defects increase during semiconductor layer growth
Solution Approach 1:
The patent applies the intermediary principle by introducing a buffer layer between the metal layer and the semiconductor layers. This buffer layer acts as a mediator that allows the metal layer to provide thermal conductivity benefits while preventing direct contact that would cause dislocation defects during semiconductor layer growth. The buffer layer absorbs mechanical stress and prevents defect propagation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat, improves current spreading, reduces defects, and increases the reliability and luminous efficiency of semiconductor light emitting devices by utilizing the high thermal conductivity of the metal layer and its ability to block dislocations.
Implementation Method 1
utilizing the high thermal conductivity of the metal layer
Implementation Method 2
reduces defects by blocking dislocations occurring when a semiconductor layer is grown
Data Source
AI summary
There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.