Semiconductor Light Emitting Device Optical Path Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor light emitting devices face challenges in achieving high light extraction efficiency while maintaining the area of the light emitting layer, as existing structures like flip-chip and thin-film configurations lead to decreased light emitting layer area and increased current density, resulting in reduced internal quantum efficiency and increased power consumption.
Innovation Solution
The semiconductor light emitting device incorporates an optical path control section with a lower refractive index than the semiconductor layers, penetrating through the light emitting layer to scatter light components parallel to the film surface, combined with a light extraction surface featuring unevenness to enhance light extraction efficiency without reducing the light emitting layer area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the light emitting layer is divided into a plurality of regions with gaps to increase light extraction efficiency, then light extraction efficiency is improved, but the area of the light emitting layer is decreased
Solution Approach 1:
An insulative optical path control section with lower refractive index than the semiconductor layers is introduced as an intermediary element. This section penetrates through the light emitting layer and scatters light components traveling parallel to the film surface, enabling increased light extraction efficiency without requiring gaps in the light emitting layer structure
Solution Approach 2:
The refractive index parameter is strategically utilized by introducing an insulative optical path control section with lower refractive index than the surrounding semiconductor layers. This parameter change enables optical path control and light scattering to improve extraction efficiency while preserving the continuous light emitting layer area
2Loss of energy
If conventional flip-chip or thin-film structures are used to improve light extraction, then light extraction efficiency is improved, but current density increases and internal quantum efficiency decreases
Solution Approach 1:
The insulative optical path control section acts as an intermediary that scatters light without requiring the light emitting layer to be divided or thinned. This maintains uniform current distribution across the light emitting layer, preventing the current density increase and internal quantum efficiency degradation associated with conventional structures
Solution Approach 2:
The optical path control is achieved locally through the insulative sections distributed throughout the device, allowing light scattering to occur at specific locations without affecting the overall continuity and uniformity of the light emitting layer structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases light extraction efficiency, suppresses power consumption, and minimizes internal quantum efficiency drop, while maintaining a substantial light emitting layer area, thus addressing the limitations of conventional structures.
Implementation Method 1
an insulative optical path control section penetrating through the light emitting layer and configured to scatter light components traveling generally parallel to a film surface of the light emitting layer
Implementation Method 2
having a refractive index lower than refractive index of the first semiconductor layer, refractive index of the second semiconductor layer, and refractive index of the light emitting layer
Implementation Method 3
light traveling generally parallel to the film surface of the light emitting layer is totally reflected by the gap portion
Data Source
AI summary
According to one embodiment, a semiconductor light emitting device includes: a stacked body and an insulative optical path control section. The stacked body includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the light emitting layer are stacked along a stacking direction. The insulative optical path control section penetrates through the second semiconductor layer and the light emitting layer, has a refractive index lower than refractive index of the first semiconductor layer, refractive index of the second semiconductor layer, and refractive index of the light emitting layer. The insulative optical path control section is configured to change traveling direction of light emitted from the light emitting layer.