Semiconductor Light Emitting Element Phase Modulation Layer
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Solution Overview
Problem
Conventional semiconductor light emitting elements face challenges in increasing their output (light intensity).
Innovation Solution
The semiconductor light emitting element comprises an active layer sandwiched by cladding layers and a phase modulation layer with different refractive index regions, where the centroid positions of these regions are strategically shifted within a virtual square lattice to form patterns both inside and outside the 'light line' on a reciprocal lattice space, enhancing light output by forming 'unnecessary' patterns that were initially considered non-contributory.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If patterns are formed only inside the light line in conventional semiconductor light emitting elements, then light output is limited to conventional levels, but forming patterns outside the light line was initially considered unnecessary and thus output enhancement was not achieved
Solution Approach 1:
The invention transitions from conventional two-dimensional pattern design (inside light line only) to utilizing the third dimension of reciprocal lattice space by extending patterns outside the light line boundary. This dimensional expansion in reciprocal space enables new modes of light emission that were previously inaccessible, thereby exponentially increasing light output while maintaining design flexibility.
Solution Approach 2:
The invention converts the previously considered harmful or useless phenomenon of light emission outside the light line (which was thought to be lost or wasted) into a beneficial contribution to overall light output. By deliberately designing patterns that extend outside the light line in reciprocal lattice space, the invention recovers and utilizes what was previously discarded, achieving exponential output enhancement.
2Illumination intensity
If the centroid positions of different refractive index regions are shifted by a larger distance from lattice points, then output enhancement may occur, but manufacturing precision requirements increase
Solution Approach 1:
The invention optimizes the shift distance parameter r to a specific small range (0.002a ≤ r ≤ 0.005a) rather than using large shifts. This parameter optimization achieves the desired output enhancement while keeping the manufacturing precision requirements within feasible limits, balancing performance improvement with manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the output of the semiconductor light emitting element exponentially, particularly when the shift distance r is between 0.002a and 0.005a, leading to higher peak optical outputs without external light emission as noise.
Implementation Method 1
the phase modulation layer includes a basic layer and a plurality of different refractive index regions that are different in refractive index from the basic layer
Implementation Method 2
The 'light line' means a borderline on a reciprocal lattice space corresponding to a critical angle at which light generated in a semiconductor light emitting element is totally reflected when the light is output into air
Data Source
AI summary
The present semiconductor light emitting element is a semiconductor light emitting element including an active layer, an upper cladding layer and a lower cladding layer that sandwich the active layer, and a phase modulation layer optically coupled to the active layer, in which the phase modulation layer includes a basic layer and a plurality of different refractive index regions that are different in refractive index from the basic layer, and the plurality of different refractive index regions are disposed so as to form a pattern in a region outside a light line on a reciprocal lattice space in the phase modulation layer.