Semiconductor Light Emitting Device Phosphor Layer Optimization

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Solution Overview

Problem

The degradation of optical characteristics in semiconductor light emitting devices due to the conditions of the phosphor layer and multiple phosphors leads to issues with light emission and color uniformity.

Innovation Solution

A semiconductor light emitting device is designed with a phosphor layer on one side of the semiconductor layer, where the phosphor layer includes multiple phosphors dispersed in a binder, and specific ratios of thickness to width and number of phosphors are optimized to minimize hue shift, ensuring effective light extraction and color conversion, with a support body and interconnect layers on the opposite side for improved light output and thermal management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple phosphors are provided in the phosphor layer, then color conversion capability is improved, but hue shift increases and color uniformity deteriorates

Engineering Contradiction:
Improvecolor conversion capabilityVSAvoidcolor uniformity
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent optimizes specific parameters including the thickness-to-width ratio of the phosphor layer (0.01 to 0.05) and the number of phosphors (3 to 7 types) to minimize hue shift while maintaining color conversion capability. These parameter adjustments resolve the contradiction by finding the optimal balance point.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies different phosphors with specific characteristics (peak wavelengths, half-value widths, quantum efficiencies) at different locations and combinations within the phosphor layer. This local optimization of phosphor selection and distribution maintains color uniformity while achieving comprehensive color conversion.

Inventive Principle:
Principle #3Local quality

2Use of energy by moving object

If phosphor layer thickness is increased, then light absorption and color conversion are improved, but light extraction efficiency decreases

Engineering Contradiction:
Improvecolor conversion efficiencyVSAvoidlight extraction efficiency
Core Design Contradiction:
Use of energy by moving objectVSLoss of energy

Solution Approach 1:

The patent optimizes the thickness-to-width ratio parameter of the phosphor layer to be between 0.01 and 0.05. This parameter optimization ensures sufficient light absorption for effective color conversion while preventing excessive thickness that would cause total internal reflection and reduce light extraction efficiency.

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If the number of phosphors is increased, then color rendering is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvecolor rendering capabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent determines the optimal number of phosphors to be between 3 and 7 types. This parameter setting achieves comprehensive color rendering coverage while avoiding excessive manufacturing complexity that would occur with more phosphor types.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The optimized phosphor layer configuration enhances light extraction efficiency, reduces hue shift, and improves color uniformity, resulting in better optical characteristics and reliability of the semiconductor light emitting device.

Implementation Method 1

a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS9882099B2Semiconductor light emitting device
Publication Date: 2018.01.30 SAMSUNG ELECTRONICS CO LTD
  • US9882099B2 patent drawing
  • US9882099B2 patent drawing
  • US9882099B2 patent drawing

AI summary

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors, −0.05<A×(AR)+B×(Np)+C<0.05 being satisfied for −0.149055−(3×0.011797)≦constant A≦−0.149055+(3×0.011797), −0.000192−(3×0.00002461)≦constant B≦−0.000192+(3×0.00002461), and 0.0818492−(3×0.005708)≦constant C≦0.0818492+(3×0.005708). AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors.