Semiconductor Light Emitting Device with Protruding Electrode
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor light emitting devices face challenges in downsizing due to the large size of components like leadframes, conductive substrates, and bonding wires, which impede miniaturization and compromise electrode connectability, especially when the n-type electrode becomes small, making connections difficult.
Innovation Solution
The design incorporates a semiconductor light emitting device configuration with a light emitting unit, a first conductive member, an insulating layer, a second conductive member, a sealing member, and an optical layer, where the first conductive member includes a columnar portion that covers a portion of the second semiconductor layer, separated by an insulating layer, and the second conductive member is connected to the second electrode, enhancing connectability and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the n-type electrode surface area is reduced to improve heat dissipation and luminous efficiency, then heat dissipation and luminous efficiency are improved, but electrode connectability deteriorates
Solution Approach 1:
The patent extends the n-type electrode vertically by forming an n-type semiconductor layer that protrudes from the substrate surface, creating a three-dimensional structure. This vertical extension increases the electrode's surface area for connection purposes while maintaining a small footprint on the substrate, thus preserving heat dissipation and luminous efficiency. The protruding structure allows bonding wires to be connected more easily without increasing the planar area of the electrode.
2Volume of moving object
If the semiconductor light emitting device is downsized by removing leadframes and conductive substrates, then device size is reduced, but electrode connectability becomes more difficult
Solution Approach 1:
The patent integrates the n-type electrode directly with the n-type semiconductor layer formed on the substrate, eliminating the need for separate leadframes or conductive substrates. The n-type electrode and n-type semiconductor layer are merged into a single integrated structure, which simplifies the overall device configuration, reduces size, and maintains good connectability through the protruding electrode structure.
3Reliability
If the n-type electrode surface area is made small for heat dissipation optimization, then heat dissipation is improved, but the device size cannot be reduced further
Solution Approach 1:
The patent utilizes the vertical dimension by forming a protruding n-type electrode structure that extends upward from the substrate surface. This allows the electrode to have a small planar footprint for optimal heat dissipation while having sufficient surface area through its height for proper electrical connection. The three-dimensional configuration enables both small device size and adequate connection area to coexist.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration maintains high electrode connectability and supports downsizing while improving heat dissipation and luminous efficiency, allowing for a compact semiconductor light emitting device with enhanced reliability.
Implementation Method 1
an optical layer provided on a first major surface and including a wavelength conversion unit that absorbs emitted light emitted from the light emitting layer and emits light having a wavelength different from a wavelength of the emitted light
Data Source
AI summary
According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.