Semiconductor Light-Emitting Element With Segmented Base Layer

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Solution Overview

Problem

Semiconductor light-emitting elements face challenges in achieving high color rendering properties with broad light-emitting wavelength bandwidth and high light-emitting intensity due to issues with uniformity of emitted light colors, complexity of manufacturing processes, and degradation of crystallinity.

Innovation Solution

A semiconductor light-emitting element with a light-emitting functional layer featuring a base layer with random net-shaped base segments and a quantum well structure layer, where the base layer includes a first sub-base layer, a trench to partition the base segments, and a second sub-base layer to bury the first sub-base layer, enhancing light-emitting efficiency and broadening the wavelength bandwidth.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If an unevenly structured layer is inserted between the active layer and n-type semiconductor layer to broaden the light-emitting wavelength bandwidth, then the color rendering properties are improved, but the manufacturing process complexity increases and crystallinity degradation occurs

Engineering Contradiction:

Improvelight-emitting wavelength bandwidthVSAvoidmanufacturing process complexity

Core Design Contradiction:

Illumination intensityVSDevice complexity

Solution Approach 1:

The base layer is segmented into multiple base segments arranged in a random net shape, creating a compositionally modulated structure that broadens the light-emitting wavelength bandwidth without requiring additional unevenly structured layers

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The base segments have a composition subject to stress strain that differs from the surrounding matrix, creating local compositional variations that broaden the emission spectrum while maintaining overall structural integrity and avoiding crystallinity degradation

Inventive Principle:

Principle #3Local quality

2Illumination intensity

If multiple active layers with different compositions are laminated to broaden the light-emitting wavelength bandwidth, then the color rendering properties are improved, but the manufacturing process complexity and device structure complexity increase

Engineering Contradiction:

Improvelight-emitting wavelength bandwidthVSAvoidstructure complexity

Core Design Contradiction:

Illumination intensityVSDevice complexity

Solution Approach 1:

Instead of laminating multiple active layers with different compositions, the invention changes the compositional parameter within a single active layer by creating base segments with stress-strained composition, achieving broadened wavelength bandwidth without increased structural complexity

Inventive Principle:

Principle #35Parameter changes

3Illumination intensity

If processing steps are added to form unevenly structured layers, then the light-emitting wavelength bandwidth is broadened, but the manufacturing process complexity increases

Engineering Contradiction:

Improvelight-emitting wavelength bandwidthVSAvoidmanufacturing process complexity

Core Design Contradiction:

Illumination intensityVSEase of manufacture

Solution Approach 1:

The compositional modulation is built into the base layer during the initial growth process, so the light-emitting wavelength bandwidth is broadened without requiring subsequent processing steps to form unevenly structured layers

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution results in a semiconductor light-emitting element with high color rendering properties and high light-emitting intensity by improving light-emitting efficiency and broadening the wavelength bandwidth, while reducing non-radiative recombination and enhancing crystallinity.

Implementation Method 1

a base layer with a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer

Methodology Applied

Scientific EffectStress strain:

Implementation Method 2

a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer

Methodology Applied

Scientific EffectQuantum well structure:

Implementation Method 3

A semiconductor light-emitting element emits light by binding (recombination), in the active layer, of an electron and hole injected into the element through electrodes

Methodology Applied

Scientific EffectRecombination:

Implementation Method 4

The wavelength of light emitted from the active layer (i.e. emitted light color) is determined by the band gap of the semiconductor material constituting the active layer

Methodology Applied

Scientific EffectBand gap:

Data Source

PatentEP3276676B1Semiconductor light-emitting element and method of manufacturing the same

Publication Date: 2020.01.15 STANLEY ELECTRIC CO LTD

Figure 1(a)~1(b)
Figure 2(a)~2(b)
Figure 3(a)~3(d)

AI summary

A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.