Semiconductor Light Emitting Apparatus Spontaneous Light Rejection
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Solution Overview
Problem
Existing semiconductor light emitting apparatuses with integral light emitting and detecting components face challenges in achieving high light detection accuracy due to the inclusion of spontaneously emitted light, which interferes with the measurement of inducedly emitted light, particularly in applications requiring precise control of light output.
Innovation Solution
A semiconductor light emitting apparatus is designed with a layered structure comprising a light transmitting part and a metal part between the light emitting device and the light detector, where the light transmitting part is positioned over the light emitting region and the metal part is in the outer peripheral region, effectively reflecting spontaneously emitted light back towards the light emitting device, thereby reducing its detection by the light detector.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the semiconductor light emitting device and the semiconductor light detector are formed integrally, then the number of component parts is reduced and layout accuracy requirements are lowered, but the semiconductor light detector detects both stimulatedly emitted light and spontaneously emitted light, resulting in measurement errors
Solution Approach 1:
The patent divides the semiconductor light detector into multiple regions: a first region that detects stimulatedly emitted light and a second region that detects spontaneously emitted light. By segmenting the detection areas and processing signals separately, the system can distinguish between useful signal and noise, resolving the contradiction between integral structure and measurement accuracy.
Solution Approach 2:
The patent applies different detection characteristics to different regions of the semiconductor light detector. The first region is optimized for detecting stimulatedly emitted light while the second region detects spontaneously emitted light, allowing each region to have specialized properties that address the specific measurement needs.
2Measurement precision
If a control layer is provided in the semiconductor light detector to shield spontaneously emitted light, then light detection accuracy is improved, but the oxidized semiconductor material has insufficient reflectance and transmits some spontaneously emitted light
Solution Approach 1:
The patent uses a composite structure combining semiconductor material with an oxidized control layer. The semiconductor material provides the base detection function while the oxidized layer adds shielding capability. This composite approach achieves both detection functionality and improved spontaneous light rejection.
Solution Approach 2:
The patent segments the semiconductor light detector into multiple functional regions including a first region for stimulated light detection and a second region for spontaneous light detection, allowing differential signal processing that improves overall measurement accuracy despite the limitations of the control layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly enhances light detection accuracy by minimizing the detection of spontaneously emitted light, allowing for more precise measurement of inducedly emitted light output, thus improving the overall light detection accuracy compared to previous technologies.
Implementation Method 1
the metal part is provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure... effectively reflecting spontaneously emitted light back towards the light emitting device
Implementation Method 2
The semiconductor light detector has a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction
Data Source
AI summary
Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.