Semiconductor Light Emitting Element Street Portion Removal
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Solution Overview
Problem
Conventional semiconductor light emitting element manufacturing methods face issues with metal residuals bonding to the active layer and etching residuals during the formation of street portions, leading to leaks and damage during the dicing process.
Innovation Solution
The method involves forming sacrifice portions within the street portions of the semiconductor laminated body, using wet etching to remove these portions, and forming electrodes and sacrifice portions from the same material to simplify the production process and prevent residual bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional wet etching is used to remove street portions, then etching residuals remain in the streets, but using broader removal areas prevents dicing damage
Solution Approach 1:
The patent divides the street portion removal process into two distinct stages: first removing the semiconductor layer to form isolation trenches, then separately removing the sacrificial metal layer. This segmentation allows each etching process to be optimized independently, preventing residual bonding while ensuring complete removal.
Solution Approach 2:
The patent introduces a sacrificial metal layer that is deposited beforehand to line the isolation trenches. This preliminary action creates a removable template that guides the subsequent etching process, ensuring that street portions are completely removed without leaving residuals that could bond to the active layer during dicing.
2Object-generated harmful factors
If dry etching is used to remove street portions, then metal particles may bond to active layer end faces, but wet etching can leave etching residuals
Solution Approach 1:
The patent uses a sacrificial metal layer as an intermediary substance that facilitates the removal process. This intermediary layer is specifically designed to be removable by wet etching without leaving residuals, thereby avoiding the metal particle bonding issue while achieving complete street portion removal through the two-stage process.
Solution Approach 2:
The patent changes the material parameter of the sacrificial layer to a metal that is highly susceptible to wet etching. By selecting appropriate metal materials and controlling etching parameters, the patent achieves complete removal of the sacrificial layer without leaving residuals, thereby preventing both metal particle bonding and etching residual formation.
3Strength
If broader areas are removed to form isolation trenches, then dicing damage is prevented, but larger areas of semiconductor material are lost
Solution Approach 1:
The patent introduces a sacrificial metal layer that serves as a disposable template for the etching process. This sacrificial material is intentionally designed to be removed completely after serving its guiding function, allowing precise definition of street portions without requiring excessive removal of valuable semiconductor material.
Solution Approach 2:
The patent applies different removal depths and methods to different areas: the semiconductor layer is removed to form isolation trenches, while the sacrificial metal layer is selectively removed from street portions. This local differentiation allows complete removal of street portions without compromising the integrity of element portions, maximizing material utilization while preventing dicing damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes etching residuals and prevents leaks by ensuring complete removal of street portion materials, enhancing the integrity of the semiconductor light emitting elements during the dicing process.
Implementation Method 1
irradiating laser light onto the semiconductor laminated body from the back side of the growth substrate, thereby separating the growth substrate from the semiconductor laminated body
Implementation Method 2
performing wet etching to remove at least the sacrifice portions
Data Source
AI summary
A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.