Semiconductor Light Emitting Device Surface Irregularity

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Solution Overview

Problem

Current semiconductor light emitting devices face challenges in enhancing light extraction efficiency, particularly due to the repetition of reflection of emission light between the contact surface and the light extraction surface, which reduces emission efficiency.

Innovation Solution

The semiconductor light emitting device incorporates a stacked structure with a first part having smaller irregularity and a second part with longer pitch on the light extraction surface, where the first part is flatter than the second part, reducing the number of reflections and improving light extraction efficiency by guiding emission light efficiently to the outside.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If processing to form irregularity is performed on the light extraction surface, then light extraction efficiency is improved, but light loss due to repeated reflection increases

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidlight loss
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The light extraction surface is divided into two distinct regions: a first region with irregularity for enhancing light extraction, and a second region without irregularity for reducing light loss. This segmentation allows each region to perform its specific function optimally without the negative effects of the other.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the light extraction surface are given different surface properties. The first region has irregularity to improve light extraction efficiency, while the second region maintains a smooth surface to minimize light loss from repeated reflection. This local differentiation of surface quality resolves the contradiction between extraction efficiency and light loss.

Inventive Principle:
Principle #3Local quality

2Productivity

If irregularity is formed on the entire light extraction surface, then light extraction efficiency increases, but device complexity increases

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidsurface structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The light extraction surface is segmented into functional zones: a first region with irregularity and a second region without irregularity. This segmentation strategy achieves light extraction improvement while avoiding the need for complex irregularity patterns across the entire surface, thereby controlling device complexity.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances light extraction efficiency by minimizing light loss and improving emission distribution, with simulations showing a 1.1% increase in light extraction efficiency and an 8.2% reduction in light loss compared to reference examples.

Implementation Method 1

processing to form irregularity is performed on the surface of crystal that is exposed by removing the sapphire substrate

Methodology Applied
Scientific EffectLight scattering: Scattering

Data Source

PatentUS9130127B2Semiconductor light emitting device
Publication Date: 2015.09.08 ALPAD CORP
  • US9130127B2 patent drawing
  • US9130127B2 patent drawing
  • US9130127B2 patent drawing

AI summary

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.