Semiconductor Light Emitting Device With Through-Electrode and Thermal Gap
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in achieving high light output and long life due to insufficient heat dissipation and deterioration of sealing resin, particularly when used for illumination, as they are prone to oxidization, overheating, and degradation from ultraviolet light emission.
Innovation Solution
A semiconductor light emitting device with a thermally conductive substrate featuring recesses and protrusions for improved heat dissipation, a through-electrode for electrical connection, and a gap between the light emitting element and fluorescent material to reduce heat and light exposure to the resin, along with a reinforcing film to stabilize the fluorescent material and prevent direct contact, enhancing heat dissipation and resin durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the light output is increased for illumination purposes, then the light emission capability is improved, but the heat dissipation becomes insufficient causing resin deterioration
Solution Approach 1:
The patent introduces a vertical gap between the light emitting element and fluorescent material, creating a three-dimensional spatial separation. This gap structure allows heat to dissipate vertically while maintaining the light emission function, resolving the contradiction between high light output and resin durability by adding a spatial dimension to heat management.
Solution Approach 2:
The patent introduces a reflective layer as an intermediary component between the light emitting element and the fluorescent material. This reflective layer mediates the interaction by redirecting light while preventing direct thermal contact, thereby protecting the resin from heat while maintaining illumination effectiveness.
2Temperature
If the substrate is made thinner for better heat dissipation and flexibility, then the thermal management and adaptability are improved, but the handling ease and reliability deteriorate
Solution Approach 1:
The patent applies local quality by creating recesses and protrusions at specific locations on the substrate rather than uniformly thinning the entire substrate. This localized structural modification provides enhanced heat dissipation pathways and mechanical anchoring points while maintaining sufficient substrate thickness in critical areas for handling reliability.
3Adaptability or versatility
If the substrate is made thinner for flexibility, then the adaptability is improved, but the reliability deteriorates
Solution Approach 1:
The patent implements local quality by selectively thinning the substrate in non-critical areas while maintaining adequate thickness in load-bearing regions. The recesses and protrusions are strategically positioned to provide flexibility where needed while preserving structural integrity and reliability in critical support zones.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables higher light output and longer device life by effectively dissipating heat and reducing resin deterioration, while maintaining flexibility and reliability in the substrate structure.
Implementation Method 1
yellow light produced by self-excited light emission at substrate defects of the blue light emitting device, primary color fluorescent material excitation light sources using ultraviolet light emitting devices
Implementation Method 2
a substrate including a first major surface and a second major surface... effectively dissipating heat
Data Source
AI summary
A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.