Semiconductor Light-Emitting Device Transparent Electrode Current Diffusion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor light-emitting devices face challenges in achieving sufficient current diffusion in transparent electrodes while minimizing light absorption, as reducing the thickness of these electrodes improves light transmission but compromises current diffusion.
Innovation Solution
A semiconductor light-emitting device design featuring a transparent electrode with a thickness of 10 nm to 150 nm and a reflection electrode with a high number density of contact electrodes (400/mm2 to 1,000/mm2) that is in contact with the transparent electrode through openings in an insulating film, ensuring current diffusion and suppressing light absorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the thickness of the transparent electrode is reduced to shorten the optical path and suppress light absorption, then light transmission is improved, but current diffusion becomes insufficient
Solution Approach 1:
The invention segments the transparent electrode into multiple thin layers (first transparent electrode layer and second transparent electrode layer) with an insulating film and reflection electrode in between. This segmentation allows each layer to be optimized independently - the first layer focuses on current diffusion while the second layer focuses on light transmission, resolving the contradiction between these two functions.
Solution Approach 2:
The invention introduces a reflection electrode as an intermediary component between the two transparent electrode layers. This reflection electrode serves dual functions: it provides additional current diffusion pathways through its contact electrodes while also reflecting light back through the second transparent electrode layer, thereby reducing light absorption without compromising current diffusion.
2Illumination intensity
If the thickness of the transparent electrode is reduced to improve light transmission, then the optical path is shortened, but current diffusion capability deteriorates
Solution Approach 1:
The transparent electrode is segmented into multiple thin layers, allowing the first layer to be optimized for current diffusion (thicker) and the second layer to be optimized for light transmission (thinner). This segmentation resolves the contradiction by distributing the functional requirements across separate layers.
Solution Approach 2:
Different regions and layers of the transparent electrode structure are given different qualities - the first transparent electrode layer has higher conductivity and thickness for current diffusion, while the second layer has higher transparency and lower thickness for light transmission. This local differentiation resolves the global contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively diffuses current to enhance light emission and minimizes light absorption in the transparent electrode, resulting in improved light-emitting efficiency.
Implementation Method 1
the light-emitting device can reflect a light transmitting through the transparent electrode from a light-emitting part toward the light-emitting part
Implementation Method 2
Current is diffused in a light emitting surface inside this transparent electrode
Data Source
AI summary
The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by the transparent electrode is suppressed. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent electrode, a transparent insulating film, and a reflection electrode. The transparent electrode contains In. The thickness of the transparent electrode is 10 nm to 150 nm. The reflection electrode is a p-type electrode. The reflection electrode P1 has a plurality of contact electrodes being in contact with the transparent electrode at a plurality of openings. The number density of the contact electrodes is 400/mm2 to 1,000/mm2.