Semiconductor Light Emitting Device Vertical Light Transmitting Layer

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Solution Overview

Problem

Existing semiconductor light emitting devices face challenges in optimizing light orientation and emission efficiency, particularly in directing light in specific directions, which affects their performance in applications like LEDs and laser diodes.

Innovation Solution

A semiconductor light emitting device structure is developed, featuring a reflective electrode layer and a conductive supporting member, along with a light transmitting layer, to adjust and enhance light orientation by reflecting light in both upward and lateral directions, improving light emission characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If a conventional light emitting structure is used, then light emission occurs, but light orientation control is insufficient

Engineering Contradiction:

Improvelight emissionVSAvoidlight orientation control

Core Design Contradiction:

Illumination intensityVSEase of manufacture

Solution Approach 1:

A light transmitting layer is introduced as an intermediary component between the light emitting structure and the external environment. This layer has a different refractive index than the surrounding medium, enabling control over light orientation and extraction efficiency without modifying the light emitting structure itself.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The refractive index parameter of the light transmitting layer is specifically optimized to differ from the surrounding medium, creating favorable conditions for light orientation control. By adjusting this optical parameter, the device achieves improved light extraction in specific directions while maintaining manufacturing simplicity.

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If light is emitted in all directions, then total light output is maximized, but lateral direction emission is insufficient

Engineering Contradiction:

Improvetotal light outputVSAvoidlateral direction emission

Core Design Contradiction:

Quantity of substanceVSIllumination intensity

Solution Approach 1:

The light transmitting layer provides different optical properties in different spatial regions. By positioning this layer specifically and controlling its thickness and refractive index, the device enhances light emission in the lateral direction while maintaining overall light output, creating local optimization without sacrificing global performance.

Inventive Principle:

Principle #3Local quality

3Ease of manufacture

If the light transmitting layer is made thicker, then light orientation control is improved, but device complexity increases

Engineering Contradiction:

Improvelight orientation controlVSAvoidlayer thickness control

Core Design Contradiction:

Ease of manufactureVSDevice complexity

Solution Approach 1:

Instead of using complex multi-layer structures or precise thickness variations, the invention achieves light orientation control by optimizing a single parameter - the thickness of the light transmitting layer. This simplifies the device structure while maintaining effective control over light orientation characteristics.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed structure effectively adjusts light orientation and increases light emission in the lateral direction, enhancing the performance and efficiency of semiconductor light emitting devices by optimizing light distribution and orientation.

Implementation Method 1

a reflective electrode layer capable of reflecting light under a light emitting structure toward an upper direction and a lateral direction

Methodology Applied

Scientific EffectReflection: Reflection

Implementation Method 2

a light transmitting layer under a lower surface of the light emitting structure

Methodology Applied

Scientific EffectLight transmission:

Data Source

PatentUS8975650B2Semiconductor light emitting device including a vertically arranged light transmitting layer and light emitting structure

Publication Date: 2015.03.10 SUZHOU LEKIN SEMICON CO LTD

AI summary

A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.