Semiconductor Light-Emitting Structure for Low-Divergence High Brightness
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Solution Overview
Problem
Semiconductor light-emitting devices in prior art lack high integration, reliability, and low costs while achieving high brightness and high power, with existing methods requiring complex processes and limited current operating ranges.
Innovation Solution
A high-brightness high-power semiconductor light-emitting device is designed with a modulation structure including a carrier modulation active layer, a modulation tunnel junction, a cavity extension layer, and a first current-limiting layer, where the carrier concentration in the carrier modulation active layer is lower than in the first active layer, allowing for low-order mode light emission and feedback to enhance brightness and reduce divergence angle without complex external processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If surface microstructure or external beam shaping structure is introduced to improve brightness and reduce divergence angle, then optical performance is improved, but device complexity and manufacturing complexity increase
Solution Approach 1:
The patent extracts the beam shaping function from external structures and relocates it to the active layer itself by creating a carrier concentration distribution that inherently produces low-divergence light emission, eliminating the need for surface microstructures or external beam shaping components
Solution Approach 2:
The active layer performs self-regulation of light emission characteristics through its internal carrier concentration distribution, where the graded carrier concentration profile automatically generates the desired low-divergence beam pattern without requiring external control mechanisms or additional structural components
2Illumination intensity
If high-order mode absorption depletion layer is introduced to improve brightness, then optical performance is improved, but device complexity and manufacturing complexity increase
Solution Approach 1:
The patent changes the fundamental parameter from absorbing high-order modes to directly emitting low-order modes by controlling carrier concentration distribution, simplifying the approach from mode selection to mode generation and reducing manufacturing complexity
3Illumination intensity
If external cavity structure is introduced to improve brightness and reduce divergence angle, then optical performance is improved, but device integration level and stability decrease
Solution Approach 1:
The patent merges the beam shaping function with the active layer by integrating the carrier concentration distribution control directly into the light-emitting region, combining multiple functions (light generation and beam shaping) into a single component to improve integration and stability
4Illumination intensity
If conventional methods are used to improve brightness, then optical performance is improved, but production controllability decreases and current operating range is limited
Solution Approach 1:
The patent introduces dynamic control capability by enabling independent adjustment of carrier concentration distribution parameters, allowing the device to adapt to different operating conditions and current ranges while maintaining optimal beam characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high brightness and low divergence angle through epitaxial growth, reducing manufacturing difficulty and costs, and increasing the operating current range without the need for additional process steps or external regulation.
Implementation Method 1
a carrier modulation active layer; where a carrier concentration in the carrier modulation active layer is less than a carrier concentration in the first active layer, and the first active layer and the carrier modulation active layer are arranged in the same resonant cavity
Implementation Method 2
a modulation tunnel junction arranged on a side of the carrier modulation active layer away from the semiconductor substrate layer
Implementation Method 3
a cavity extension layer arranged on a side of the modulation tunnel junction away from the carrier modulation active layer; the first active layer and the carrier modulation active layer are arranged in the same resonant cavity
Data Source
AI summary
A high-brightness high-power semiconductor light-emitting device and a method for manufacturing same. The high-brightness high-power semiconductor light-emitting device includes: a semiconductor substrate layer; a modulation structure arranged on the semiconductor substrate layer, where the modulation structure includes: a carrier modulation active layer; a modulation tunnel junction arranged on a side of the carrier modulation active layer away from the semiconductor substrate layer; and a cavity extension layer arranged on a side of the modulation tunnel junction away from the carrier modulation active layer; a first active layer arranged on a side of the modulation structure away from the semiconductor substrate layer, where a carrier concentration in the carrier modulation active layer is less than a carrier concentration in the first active layer; and a first current-limiting layer arranged on a side of the first active layer away from the modulation structure. The high-brightness high-power semiconductor light-emitting device can have a high level of integration, high reliability, and low costs while implementing high brightness and high power.