Semiconductor Light-Emitting Structure With SiN Layer for Light Extraction
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Solution Overview
Problem
Current semiconductor light-emitting devices have limited light extraction efficiency, which constrains the development of intelligent lighting systems that require higher efficiency.
Innovation Solution
A semiconductor light-emitting device is designed with a substrate, protrusions, a buffer layer, an intermediate silicon nitride layer, and a light-emitting stacked body. The protrusions feature a lower pattern and a feature pattern with a different material, enhancing light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional semiconductor light-emitting device structure is used, then device simplicity is maintained, but light extraction efficiency is limited
Solution Approach 1:
The protrusion structure is divided into two distinct patterns: a lower pattern made of the same material as the substrate, and a feature pattern made of a different material disposed on the lower pattern. This segmentation allows each pattern to serve specific functions - the lower pattern provides structural support while the feature pattern enhances light extraction through refractive index differences.
Solution Approach 2:
The feature pattern is selectively disposed on specific regions of the lower pattern, creating local variations in material composition and refractive index. This local quality enhancement targets specific areas where light extraction benefits are maximized, rather than uniformly modifying the entire device structure.
2Manufacturing precision
If protrusions with single material are used, then manufacturing process is simpler, but crystal quality of light-emitting stacked body is reduced
Solution Approach 1:
The protrusion is segmented into lower pattern and feature pattern with different materials. The lower pattern material matches the substrate material to maintain structural integrity, while the feature pattern material is selected to enhance crystal quality of the light-emitting stacked body through controlled epitaxial growth.
Solution Approach 2:
The feature pattern acts as an intermediary layer between the substrate and the light-emitting stacked body. This intermediate structure with different material composition facilitates improved crystal growth conditions for the light-emitting stacked body, serving as a mediator that enhances crystal quality without requiring complete restructuring of the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design significantly increases light extraction efficiency compared to traditional semiconductor light-emitting devices, while also improving the crystal quality of the light-emitting stacked body.
Implementation Method 1
Each protrusion of the plurality of protrusions includes a lower pattern including a same material as the first material of the substrate, and a feature pattern disposed on the lower pattern and including a second material different from the first material of the substrate
Data Source
AI summary
A semiconductor light-emitting device includes a substrate including a first material, a plurality of protrusions, a buffer layer on the substrate and the plurality of protrusions, an intermediate layer on the buffer layer, and a light-emitting stacked body on the intermediate layer. Each protrusion of the plurality of protrusions includes a lower pattern including a same material as the first material of the substrate, and a feature pattern disposed on the lower pattern and including a second material different from the first material of the substrate. The intermediate layer includes silicon nitride (SiN).