Semiconductor Light Source with Phosphor Layer and Radiating Substrate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor light source apparatuses face challenges in maintaining high brightness and uniform color tone due to thermal quenching and light reflection issues, particularly when using high power semiconductor light-emitting devices under large currents, which lead to reduced light intensity and inefficient heat radiation.
Innovation Solution
A semiconductor light source apparatus with a phosphor layer located on a radiating substrate via an adhesive material, lacking a resin component, and a polarizer to ensure the blue light enters without mirror reflection, allowing efficient wavelength conversion and heat radiation while maintaining a uniform color tone.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a large current is flowed in the semiconductor light-emitting device to enhance excitation intensity, then the brightness is improved, but heat is generated causing tarnish of transparent resin and thermal quenching of phosphor layer
Solution Approach 1:
The invention extracts and removes the transparent resin from the phosphor layer structure. By forming the phosphor layer without transparent resin, the harmful thermal quenching effect and tarnish caused by high temperature are eliminated, allowing the system to operate at high currents without degradation of optical properties
Solution Approach 2:
The invention uses a composite structure combining phosphor particles with a transparent adhesive layer instead of traditional transparent resin in the phosphor layer. This composite approach maintains structural integrity while eliminating the thermal quenching issue, as the adhesive layer has different thermal properties compared to conventional transparent resins
2Reliability
If a phosphor ceramic layer without transparent resin is used to prevent tarnish, then thermal quenching is prevented, but light reflected from the phosphor ceramic layer returns to the semiconductor light-emitting device causing reduction of light use efficiency
Solution Approach 1:
The invention introduces a transparent adhesive layer as an intermediary between the semiconductor light-emitting device and the phosphor layer. This adhesive layer acts as a mediator that prevents direct reflection of light back to the light-emitting device while maintaining thermal stability, thus resolving both the thermal quenching and light efficiency issues
Solution Approach 2:
The invention changes the optical and thermal parameters of the interface between the light-emitting device and phosphor layer by using a transparent adhesive with specific refractive index and thermal conductivity properties. This parameter optimization reduces light reflection while maintaining thermal management
3Stability of the object's composition
If the phosphor layer includes transparent resin to maintain structural integrity, then the layer stability is improved, but the transparent resin absorbs light and causes reduction of excitation intensity due to thermal quenching
Solution Approach 1:
The invention extracts and removes the transparent resin from the phosphor layer composition. By eliminating this component, the light absorption and thermal quenching effects are removed, allowing maximum excitation intensity to reach the phosphor particles while maintaining layer stability through the transparent adhesive structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the semiconductor light source apparatus to emit high-brightness, uniform color lights with improved light use efficiency and radiating efficiency, suitable for various lighting applications such as stage lights, street lights, and vehicle lamps.
Implementation Method 1
a light-emitting area of the semiconductor light source being located on the at least one phosphor layer to wavelength-convert the blue light emitted from the semiconductor light source by the at least one phosphor layer
Implementation Method 2
a radiating substrate that radiates heat generated from the phosphor layer
Implementation Method 3
a polarizer located adjacent to the at least one phosphor layer; the blue light emitted from the semiconductor light source travelling along the optical axis changes direction toward the at least one phosphor layer after being reflected from at least one of the substrate and the adhesive material
Data Source
AI summary
A semiconductor light source apparatus can emit various color lights having a substantially uniform color tone and high brightness. The semiconductor light source apparatus can include a radiating substrate, at least one phosphor layer disposed on the radiating substrate and a semiconductor light source emitting blue light. The at least one phosphor layer can be composed of at least one of a glass phosphor and a phosphor ceramic. The light source can be located adjacent the phosphor layer so that the blue light having high brightness can be efficiently reflected on the radiating substrate via the phosphor layer while preventing the blue light from a mirror reflection on the phosphor layer. Thus, the disclosed subject matter can provide a semiconductor light source apparatus that can emit various uniform color lights having high brightness and a lighting unit using the light source apparatus, which can be used for general lighting, vehicle lighting etc.