Semiconductor Liner Structure With Air Gaps for Lower RC Delay
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices are increasingly complex, leading to deficiencies and a need for improved manufacturing processes to address these challenges.
Innovation Solution
A semiconductor device structure is developed with liner structures that include dielectric liner portions and air gaps to reduce capacitive coupling between interconnect structures, thereby decreasing resistance-capacitance (RC) delay and improving performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing processes are used for semiconductor devices, then existing device functionality is achieved, but manufacturing complexity increases and performance limitations occur
Solution Approach 1:
The manufacturing process is divided into distinct stages: forming the air gap between contacts, depositing the dielectric liner material, and patterning the liner structure. This segmentation allows each step to be optimized independently, reducing overall manufacturing complexity while improving device performance through precise control of liner formation.
Solution Approach 2:
The air gap is formed between contacts before the dielectric liner is deposited. This preliminary action creates a defined space that guides the subsequent liner formation process, ensuring proper liner placement and reducing manufacturing complexity by establishing the structural framework early in the process.
2Speed
If dielectric liner portions and air gaps are implemented, then capacitive coupling is reduced and operation speed is enhanced, but device structure becomes more complex
Solution Approach 1:
The dielectric liner material acts as an intermediary substance deposited within the air gap between contacts. This liner reduces capacitive coupling between adjacent interconnect structures, thereby enhancing operation speed. The liner is formed through a dedicated deposition step that integrates into the existing manufacturing flow, managing structural complexity while achieving performance improvement.
Solution Approach 2:
The introduction of dielectric liner portions changes the electrical parameters of the device by reducing parasitic capacitance between interconnect structures. This parameter change directly improves operation speed. The liner thickness and material properties are controlled through deposition parameters, allowing optimization of electrical performance without proportionally increasing structural complexity.
3Reliability
If RC delay is minimized through air gaps and liner structures, then performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The air gap structure serves as a self-aligning template for dielectric liner deposition. The liner naturally forms within the defined air gap boundaries through conformal deposition, reducing the need for additional alignment steps and lowering manufacturing precision requirements. The structure essentially deposits itself in the correct location, improving performance while managing precision demands.
Solution Approach 2:
By pre-forming the air gap structure before liner deposition, the patent establishes a defined geometric framework that guides subsequent liner formation. This preliminary action reduces the precision requirements for liner deposition, as the liner simply needs to conform to the pre-existing air gap boundaries rather than requiring precise independent placement.
Data Source
AI summary
The present application discloses a semiconductor device including a substrate, a contact, a landing pad, a bit line, and an air gap. The contact is disposed over the substrate. The landing pad is disposed over the contact. The landing pad includes a plug, a first spacer, and a second spacer. The plug is disposed over and in contact with the contact. The first spacer is disposed over the plug. The second spacer is sandwiching a protruding portion of the plug. The bit line is disposed over the substrate. The air gap is disposed between the contact and the bit line.