Semiconductor Treatment Liquid for Ether-Bond Resin Removal
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Solution Overview
Problem
Existing methods for removing resins with ether bonds from semiconductor substrates are inefficient, leading to reduced peeling rates and substrate corrosion, particularly when using alkali metal compounds or decomposition catalysts.
Innovation Solution
A semiconductor treatment liquid is produced by heating phosphoric acid and mixing it with aqueous hydrogen peroxide or nitric acid solutions, creating a solution that effectively cleaves ether bonds and suppresses silicon substrate corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If alkali metal compounds or decomposition catalysts are used to remove resins with ether bonds, then removal efficiency is improved, but substrate corrosion occurs and Si surface becomes rough
Solution Approach 1:
The invention changes the chemical composition parameters of the treatment liquid by replacing alkali metal compounds and decomposition catalysts with phosphoric acid as the main component, combined with hydrogen peroxide and/or nitric acid. This parameter change resolves the contradiction by achieving effective resin removal through oxidation mechanisms that do not cause substrate corrosion or surface roughening.
Solution Approach 2:
The invention uses phosphoric acid, hydrogen peroxide, and nitric acid as consumable treatment liquids that can be easily disposed of after use. These chemicals effectively remove resins through oxidation without causing permanent damage to the substrate, replacing the need for complex catalyst systems that leave harmful residues causing corrosion.
2Strength
If decomposition catalysts for cured epoxy resin are used, then peeling action is enhanced, but removal efficiency is greatly reduced for resins with ether bonds without halogen atoms
Solution Approach 1:
The invention changes the chemical mechanism from catalyst-dependent decomposition to oxidation-based removal. By using phosphoric acid combined with hydrogen peroxide and/or nitric acid, the treatment liquid achieves both strong peeling action and high removal efficiency for ether bond-containing resins through oxidative cleavage, regardless of whether halogen atoms are present.
3Ease of manufacture
If treatment liquids containing alkali metal compounds are used, then resin decomposition is promoted, but Si substrate becomes rough and corrosion occurs
Solution Approach 1:
The invention changes the pH parameter and chemical nature of the treatment liquid from alkaline to acidic. By using phosphoric acid as the base combined with oxidizing agents, the system promotes resin decomposition through oxidation rather than alkaline hydrolysis, thereby maintaining substrate surface quality and preventing corrosion while achieving effective resin removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment liquid ensures high peeling efficiency and prevents silicon substrate corrosion, enabling efficient removal of resins with ether bonds from semiconductor wafers.
Implementation Method 1
heating a phosphoric acid-containing solution to 100° C. or higher and 400° C. or lower to produce a heated solution
Implementation Method 2
cooling the heated solution to 5° C. or higher and 95° C. or lower to produce a cooled solution
Implementation Method 3
mixing the cooled solution with at least one selected from the group consisting of an aqueous hydrogen peroxide solution and an aqueous nitric acid solution
Data Source
AI summary
A method for producing a semiconductor treatment liquid used for treating a resin having an ether bond, the method comprising:heating a phosphoric acid-containing solution to 100° C. or higher and 400° C. or lower to produce a heated solution;cooling the heated solution to 5° C. or higher and 95° C. or lower to produce a cooled solution; andmixing the cooled solution with at least one selected from the group consisting of an aqueous hydrogen peroxide solution and an aqueous nitric acid solution.