Semiconductor Process Control via Localized Exposure Optimization
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Solution Overview
Problem
Modern semiconductor manufacturing faces challenges in optimizing device production beyond yield, as small variations in device features affect quality parameters like speed and leakage current, requiring a more nuanced approach to geometric and placement precision.
Innovation Solution
A method is introduced to control processing apparatus settings in semiconductor manufacturing by establishing relationships between geometric parameters and performance characteristics, allowing for tailored process settings based on expected geometric values and desired performance, optimizing critical dimensions and layer overlays to enhance device quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional exposure recipes are optimized to maximize yield, then the proportion of correctly printed devices is improved, but device quality parameters such as speed and leakage current cannot be optimized
Solution Approach 1:
The patent applies local quality by determining location-specific process settings for different regions of the substrate. Instead of using a uniform exposure recipe across the entire substrate, the system calculates and applies customized process settings (such as focus and dose adjustments) based on the expected geometric parameters and performance requirements of specific device locations. This enables simultaneous optimization of yield and quality parameters across different areas of the substrate.
Solution Approach 2:
The patent implements parameter changes by dynamically adjusting exposure parameters (focus, dose, and other controllable settings) based on calculated relationships between geometric parameters and device performance. The system modifies these parameters locally for different substrate locations to achieve desired performance characteristics while maintaining yield, rather than using fixed conventional exposure recipes.
2Productivity
If exposure parameters are uniformly optimized for yield across the substrate, then manufacturing throughput is improved, but local variations in device performance increase
Solution Approach 1:
The system determines location-specific process settings for different regions of the substrate, applying customized exposure parameters rather than uniform settings. This local optimization maintains high throughput by processing the entire substrate while improving critical dimension uniformity through position-dependent adjustments to focus, dose, and other exposure parameters.
Solution Approach 2:
The patent employs a feedback mechanism where the system calculates expected geometric parameters for each location, compares them against target values, and determines appropriate process settings to correct deviations. This closed-loop approach ensures consistent quality across the substrate while maintaining manufacturing efficiency.
3Device complexity
If a single exposure recipe is used for the entire substrate, then process complexity is reduced, but the ability to optimize both yield and performance simultaneously is lost
Solution Approach 1:
The patent segments the substrate into multiple locations or regions, each with its own calculated process settings. Instead of using a single uniform exposure recipe, the system divides the substrate and applies location-specific parameters optimized for local geometric and performance requirements, thereby improving overall device performance without significantly increasing operational complexity.
Solution Approach 2:
The system performs preliminary calculations to determine the optimal process settings for each location before actual exposure. By pre-calculating the relationship between geometric parameters and device performance, and determining appropriate settings in advance, the patent enables sophisticated local optimization without adding significant complexity to the manufacturing process execution.
Data Source
AI summary
A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.