Semiconductor Device With Local Quality MiM Capacitors
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Solution Overview
Problem
Existing semiconductor devices with multiple capacitors face challenges in optimizing capacitance density and breakdown voltage, requiring different dielectric materials and processing steps, which increases complexity and cost, especially when integrating high and low voltage capacitors on the same IC.
Innovation Solution
The semiconductor device integrates low voltage and high voltage MiM capacitors using different dielectric thicknesses and materials within the same IC, sharing common process stages to minimize processing costs and complexity, with the same photolithographic mask used to create distinct capacitors, allowing separate optimization for different voltage applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thicker dielectrics are used to increase breakdown voltage, then voltage capability is improved, but capacitance density decreases
Solution Approach 1:
The patent applies local quality by using different dielectric thicknesses in different regions of the capacitor structure. Specifically, the dielectric layer has a first thickness in a first region and a second thickness in a second region, allowing each region to be optimized for its specific function (one region for voltage handling, another for capacitance density) rather than using a uniform thickness throughout.
2Reliability
If different dielectric materials and processing steps are used for high voltage and low voltage capacitors, then capacitor performance is optimized, but device complexity increases
Solution Approach 1:
The patent merges the fabrication processes for high voltage and low voltage capacitors into a single integrated process. By forming both capacitor types simultaneously using the same deposition and patterning steps, the patent eliminates the need for separate processing sequences, thereby reducing overall device complexity while maintaining optimized performance for both capacitor types.
Solution Approach 2:
The patent creates a universal capacitor structure that can serve multiple functions - both high voltage and low voltage applications - within the same device. The single dielectric layer with varying thicknesses provides the functionality of what would traditionally require two separate capacitor structures fabricated with different materials and processes.
3Quantity of substance
If thinner dielectrics are used to increase capacitance density, then capacitance density is improved, but breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by using different dielectric thicknesses in different regions of the capacitor structure. Specifically, the dielectric layer has a first thickness in a first region and a second thickness in a second region, allowing each region to be optimized for its specific function (one region for voltage handling, another for capacitance density) rather than using a uniform thickness throughout.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables cost-effective integration of capacitors with optimized capacitance density and breakdown voltage, reducing the area required for low voltage circuits while maintaining high voltage capability, thereby enhancing circuit yield and reducing manufacturing complexity.
Implementation Method 1
metal-insulator-metal, MiM capacitor type
Implementation Method 2
the capacitance density (capacitance per unit area)
Data Source
AI summary
A semiconductor device comprising:a first, a second and a third conductive layer;the second conductive layer being located between the first and third conductive layers;wherein respective regions of the first and second conductive layers form a first capacitor; andrespective regions of the second and third conductive layers form a second capacitor.