Semiconductor Device With Local Quality Oxide Composition
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high productivity, miniaturization, and integration while maintaining favorable electrical characteristics, as manufacturing transistors with different electrical characteristics on the same layer increases complexity and decreases yield.
Innovation Solution
A semiconductor device design that includes transistors with different electrical characteristics using a layered structure of conductors, insulators, and oxides, where specific regions of the oxides and conductors overlap to form source, drain, and channel regions, allowing for varied threshold voltages without a drastic increase in manufacturing steps, utilizing metal and oxygen-based materials for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If transistors with different electrical characteristics are manufactured on the same layer, then design flexibility and integration density are improved, but manufacturing complexity increases and yield decreases
Solution Approach 1:
The patent applies local quality by forming semiconductor layers with different compositions (In-Ga-Zn-O with varying In:Ga ratios) in different regions of the same layer. This allows transistors with different threshold voltages to be created on the same layer without requiring separate manufacturing processes, as each region's local composition is tailored to achieve the desired electrical characteristics.
Solution Approach 2:
The patent changes the compositional parameters of the semiconductor material (specifically the atomic ratio of In to Ga in In-Ga-Zn-O) to achieve different threshold voltages. By adjusting the In:Ga ratio in different regions, the patent creates transistors with varied electrical characteristics while maintaining a unified manufacturing approach on the same layer.
2Adaptability or versatility
If transistors with different electrical characteristics are manufactured on the same layer, then design flexibility is improved, but productivity decreases
Solution Approach 1:
The patent merges the creation of multiple transistor types into a single manufacturing process on the same layer. By forming semiconductor layers with different In-Ga ratios simultaneously in different regions, the patent eliminates the need for separate manufacturing steps for different transistor types, thereby maintaining high productivity while achieving design flexibility.
3Quantity of substance
If semiconductor devices are miniaturized and highly integrated, then device density is improved, but maintaining favorable electrical characteristics becomes more difficult
Solution Approach 1:
The patent applies local quality by creating region-specific semiconductor compositions within the integrated circuit. Each transistor can have a locally optimized In-Ga ratio tailored to its specific electrical requirements, even as devices are miniaturized and densely integrated. This local optimization ensures favorable electrical characteristics are maintained despite high integration density.
Data Source
AI summary
A semiconductor device including a highly reliable transistor is provided. A semiconductor device includes a transistor. The transistor includes first and second gate electrodes, first and second gate insulators, a source electrode, a drain electrode, first to sixth oxides, first and second layers, and first and second gate insulators. The third oxide is under the source electrode. The fourth oxide is under the drain electrode. The sixth oxide is under the second gate electrode. The third and fourth oxides each have a function of supplying oxygen to the second oxide. The sixth oxide has a function of supplying oxygen to the second gate insulator.