Semiconductor Electrode Structure With Local Silicon Doping
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Solution Overview
Problem
Semiconductor devices, such as transistors, face challenges in maintaining stable characteristics due to electric field concentration near the second electrode, leading to increased on-resistance and current collapse.
Innovation Solution
The semiconductor device incorporates a structure with varying silicon concentrations in different regions, including a high silicon concentration in specific areas to reduce electrical resistance and trap density, thereby stabilizing characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform silicon concentration is used throughout the semiconductor structure, then manufacturing simplicity is maintained, but electric field concentration occurs near the second electrode leading to increased on-resistance and current collapse
Solution Approach 1:
The patent applies local quality by creating distinct silicon concentration zones: a first region with lower silicon concentration and a second region with higher silicon concentration. This non-uniform distribution allows the structure to suppress electric field concentration near the second electrode while maintaining overall device functionality, directly resolving the contradiction between reliability and complexity.
Solution Approach 2:
The patent changes the silicon concentration parameter spatially throughout the semiconductor structure. By varying the silicon concentration from the first region to the second region, the electric field distribution is optimized to prevent concentration effects, thereby improving device characteristics stability without requiring overly complex manufacturing processes.
2Reliability
If high silicon concentration is applied throughout the entire structure, then electrical resistance is reduced, but trap density increases leading to current collapse
Solution Approach 1:
The patent applies local quality by spatially separating the functions of resistance reduction and trap suppression. The first region with lower silicon concentration suppresses trap formation and current collapse, while the second region with higher silicon concentration reduces electrical resistance. This localized functional distribution resolves the contradiction between reducing on-resistance and preventing current collapse.
Solution Approach 2:
The patent segments the semiconductor structure into multiple regions with different silicon concentrations. The first region and second region are clearly defined with distinct silicon concentration ranges, allowing each segment to perform its specific function optimally - one for trap suppression and one for resistance reduction - thereby resolving the harmful trade-off.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first member. The second electrode includes first and second electrode regions. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial region. The second semiconductor region includes first to third semiconductor portions. At least a part of the third semiconductor portion is between the first semiconductor region and the second electrode region. The second semiconductor portion is between the first semiconductor portion and the third semiconductor region. The first member includes first and second regions.