Semiconductor Logic Cell 3D Stacked Power and Signal Routing

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Solution Overview

Problem

Current semiconductor devices face challenges in achieving high integration and enhanced electrical characteristics, particularly in the design and placement of standard cells, which can lead to collisions and reduced integration due to overlapping patterns, affecting the overall performance and efficiency of the semiconductor device.

Innovation Solution

The semiconductor device incorporates a logic cell with specific active regions, gate electrodes, and connection lines arranged in a manner that prevents collisions between upper power patterns and gate electrodes, allowing for increased integration and improved electrical characteristics by optimizing the placement and routing of standard cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If standard cells are densely integrated to increase device functionality, then device performance and multi-functionality are improved, but collisions between upper power patterns and gate electrodes occur, reducing manufacturing precision

Engineering Contradiction:
Improvedevice functionalityVSAvoidpattern placement accuracy
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent resolves the collision problem by transitioning from a two-dimensional planar layout to a three-dimensional stacked architecture. Power lines are routed in upper metal layers while gate electrodes remain in lower layers, allowing vertical separation of previously conflicting horizontal patterns. This dimensional change enables dense integration without pattern collisions, maintaining both high functionality and manufacturing precision.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If connection lines are routed to connect all standard cells, then device integration is improved, but empty spaces and routing congestion increase, reducing productivity

Engineering Contradiction:
Improvedevice integration efficiencyVSAvoidempty space
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

The patent utilizes multiple metal layers to route connection lines, transforming the routing problem from a two-dimensional constraint to a three-dimensional solution. Power lines in upper layers and signal lines in lower layers can be routed independently without interfering with each other, reducing routing congestion and eliminating empty spaces that would be required in planar designs.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The multi-layer metal structure serves multiple functions simultaneously: upper layers handle power distribution while lower layers handle signal routing. This multi-functionality allows efficient connection of all standard cells without requiring additional empty spaces for routing, thereby improving integration efficiency while minimizing area.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11387255B2Semiconductor device
Publication Date: 2022.07.12 SAMSUNG ELECTRONICS CO LTD
  • US11387255B2 patent drawing
  • US11387255B2 patent drawing
  • US11387255B2 patent drawing

AI summary

Disclosed is a semiconductor device comprising a logic cell that is on a substrate and includes first and second active regions spaced apart from each other in a first direction, first and second active patterns that are respectively on the first and second active regions and extend in a second direction intersecting the first direction, gate electrodes extending in the first direction and running across the first and second active patterns, first connection lines that are in a first interlayer dielectric layer on the gate electrodes and extend parallel to each other in the second direction, and second connection lines that are in a second interlayer dielectric layer on the first interlayer dielectric layer and extend parallel to each other in the first direction.