Semiconductor Device Low-Adhesion Film Metal Electrode Gap
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Solution Overview
Problem
In semiconductor device manufacturing, misalignment of electrodes during substrate bonding can lead to metal diffusion between substrates, affecting the characteristics of semiconductor elements or integrated circuits due to direct contact with semiconductor oxide films during heat treatment.
Innovation Solution
A semiconductor device design featuring a low-adhesion film with lower metal adhesion than semiconductor oxide films, where the metal electrode passes through the film and includes a thinner section between substrates, with gaps between the electrode and the film on each substrate to prevent metal diffusion, and uses barrier metals to further inhibit diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If substrates are bonded in multiple stages to reduce footprint, then integration density is improved, but misalignment of electrodes occurs during bonding
Solution Approach 1:
A low-adhesion film is introduced as an intermediary layer between the metal electrode and the semiconductor oxide film. This mediator prevents direct contact and subsequent diffusion while allowing the electrode to maintain its electrical connection function, thus resolving the conflict between multi-stage bonding integration and electrode alignment precision.
Solution Approach 2:
The interface between the metal electrode and semiconductor oxide film is segmented into two distinct layers: the low-adhesion film and the oxide film. This segmentation allows each layer to perform its specific function - the low-adhesion film prevents diffusion while the oxide film provides electrical insulation and structural support.
2Manufacturing precision
If misalignment occurs during substrate bonding, then electrode position accuracy deteriorates, but metal diffusion into the other substrate occurs during heat treatment
Solution Approach 1:
The low-adhesion film serves as a protective intermediary that blocks metal diffusion pathways. Even when electrode misalignment occurs, this intermediary layer prevents metal atoms from migrating into the semiconductor substrate during heat treatment, thus eliminating the harmful effect of metal diffusion.
Solution Approach 2:
The invention converts the potentially harmful direct contact between metal electrode and oxide film into a beneficial configuration where the low-adhesion film prevents diffusion. The misalignment that would normally cause harm is transformed into an opportunity to demonstrate the effectiveness of the diffusion barrier.
3Reliability
If metal electrode directly contacts semiconductor oxide film, then electrical connection is established, but metal diffusion adversely affects semiconductor element characteristics
Solution Approach 1:
The low-adhesion film is positioned as an intermediary layer that maintains electrical connection functionality while preventing metal diffusion. It allows the electrode to perform its electrical function without directly contacting the oxide film, thus resolving the contradiction between establishing electrical connection and preventing harmful diffusion.
Solution Approach 2:
The low-adhesion film introduces local quality differentiation at the electrode-oxide interface. This localized modification prevents metal diffusion in critical areas while maintaining the overall electrical connection functionality of the electrode structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents metal diffusion between substrates, maintaining the integrity of semiconductor elements or integrated circuits by ensuring non-contact between metal electrodes and oxide films, thereby enhancing the reliability and performance of the semiconductor device.
Implementation Method 1
a low-adhesion film having lower adhesion to metal than a semiconductor oxide film
Implementation Method 2
metal of an electrode provided in one substrate directly contacts a semiconductor oxide film provided on a surface of another substrate, and is diffused into the other substrate in a heat treatment step
Data Source
AI summary
A semiconductor device according to an embodiment includes a low-adhesion film, a pair of substrates, and a metal electrode. The low-adhesion film has lower adhesion to metal than a semiconductor oxide film. The pair of substrates is provided with the low-adhesion film interposed therebetween. The metal electrode passes through the low-adhesion film and connects the pair of substrates, and includes, between the pair of substrates, a part thinner than parts embedded in the pair of substrates. A portion of the metal electrode embedded in one substrate is provided with a gap interposed between the portion and the low-adhesion film on the other substrate.