Semiconductor Device Low Current Region Heat Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Expanding the active region of a semiconductor device beyond the terminal area leads to reduced heat transfer, causing temperature increases that can prevent current flow, as the area outside the terminal generates less heat and thus has higher temperatures than the main region under the terminal.
Innovation Solution
The semiconductor device incorporates a low current region outside the terminal with a lower current density than the main region, suppressing heat generation and temperature increases in this area, allowing high current flow until the main region reaches a high temperature by using a configuration with n-channel metal oxide semiconductor field effect transistors (MOSFETs) and specific impurity concentrations and gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the active region is expanded to an area outside the terminal, then the current carrying capacity is improved, but the temperature control deteriorates because heat generated in the external region is less likely to be transferred to the terminal
Solution Approach 1:
The patent applies local quality by creating distinct regions within the active area with different current density characteristics. The region under the terminal (first region) has higher current density, while the external region (second region) has lower current density. This spatial differentiation of current distribution allows the device to expand the active region for higher current capacity while preventing excessive heat generation in the external region, thus maintaining temperature control.
2Power
If the active region is expanded outside the terminal, then the device can handle higher currents, but heat dissipation efficiency deteriorates causing the external region to reach higher temperatures
Solution Approach 1:
The patent employs parameter changes by modifying the current density distribution across different regions of the active area. By establishing a gradient where current density is higher under the terminal and lower in the external region, the device optimizes the balance between power handling capability and heat dissipation efficiency. This parameter variation allows the external region to contribute to current conduction without generating excessive heat that would compromise thermal management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high current flow through the semiconductor device without being affected by the temperature of the low current region, utilizing the semiconductor substrate more efficiently and allowing higher currents compared to configurations without a low current region.
Implementation Method 1
switching elements configured to pass a current between the upper electrode and the lower electrode
Implementation Method 2
heat is dissipated from the active region by the terminal
Implementation Method 3
current density in the low current region may be lower than a current density in the main region... This suppresses heat generation in the low current region
Data Source
AI summary
A semiconductor device may include a semiconductor substrate, an upper electrode provided on an upper surface of the semiconductor substrate, a lower electrode provided on a lower surface of the semiconductor substrate, and a terminal connected to the upper electrode. The semiconductor substrate may include an active region in which switching elements are provided. The switching elements may be configured to pass a current between the upper electrode and the lower electrode. The active region may include a main region located under the terminal and an external region located outside the main region. The external region may include a low current region. A current density in the low current region may be lower than a current density in the main region in a case where the switching elements in the low current region and the main region are turned on.