Semiconductor Low-k Spacer with Converting Oxide Region
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Solution Overview
Problem
As semiconductor devices become more highly integrated, the increasing parasitic capacitance between neighboring pattern structures leads to decreased performance, as existing technologies fail to effectively reduce this capacitance.
Innovation Solution
A semiconductor device is fabricated with a low-k spacer structure that includes a non-converting and converting portion, where the converting portion is formed by oxidizing the initial spacer material, resulting in a lower dielectric constant, thereby reducing parasitic capacitance between pattern structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If semiconductor devices are highly integrated to increase functionality, then device capability is improved, but parasitic capacitance between neighboring pattern structures increases
Solution Approach 1:
The patent applies local quality by creating a converting spacer with non-uniform dielectric properties - the first portion adjacent to the contact plug maintains higher dielectric constant while the second portion adjacent to the conductive line has lower dielectric constant. This spatial variation in dielectric quality allows the spacer to simultaneously provide mechanical support near the contact plug while reducing parasitic capacitance near the conductive line, thus resolving the contradiction between device integration and parasitic capacitance reduction.
Solution Approach 2:
The patent implements parameter changes by converting the dielectric constant parameter of the spacer material through a converting process. The low-k layer is transformed into a converting spacer where the dielectric constant varies spatially - higher near the contact plug and lower near the conductive line. This parameter transformation enables the spacer to fulfill dual functions: structural support and parasitic capacitance reduction, thereby allowing high device integration without excessive parasitic capacitance.
2Object-generated harmful factors
If spacer material is converted to reduce dielectric constant, then parasitic capacitance is reduced, but structural integrity near contact plug may be compromised
Solution Approach 1:
The converting spacer employs local quality by having different dielectric constant regions within the same spacer structure. The first portion near the contact plug retains higher dielectric constant for structural support, while the second portion near the conductive line has lower dielectric constant for capacitance reduction. This localized differentiation resolves the contradiction between maintaining structural integrity and reducing parasitic capacitance.
Solution Approach 2:
The spacer is segmented into two functional portions: a first portion adjacent to the contact plug with higher dielectric constant for mechanical strength, and a second portion adjacent to the conductive line with lower dielectric constant for capacitance reduction. This segmentation allows each portion to optimize its local function, thereby resolving the contradiction between structural integrity and parasitic capacitance reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a low-k spacer structure with a lower dielectric constant effectively decreases parasitic capacitance, enhancing the performance of semiconductor devices by minimizing electrical interference between neighboring pattern structures.
Implementation Method 1
performing a converting process on the low-k layer to form a non-converting portion adjacent to side walls of the first contact plug and maintains the first low-k and a converting portion adjacent to side walls of the conductive line and having a second low-k that is lower than the first low-k
Data Source
AI summary
A method for fabricating a semiconductor device includes forming a line structure including a first contact plug on a semiconductor substrate and a conductive line on the first contact plug, forming a low-k layer having a first low-k, which covers a top surface and side walls of the line structure, performing a converting process on the low-k layer to form a non-converting portion adjacent to side walls of the first contact plug and maintains the first low-k and a converting portion adjacent to side walls of the conductive line and having a second low-k that is lower than the first low-k, and forming a second contact plug which is adjacent to the first contact plug with the non-converting portion therebetween while being adjacent to the conductive line with the converting portion therebetween.