Semiconductor Device Low-Strength Layer Thermal Stress
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Solution Overview
Problem
High-melting point solder materials in semiconductor devices can cause thermal stress that damages the electrode layer before the solder layer, leading to premature failure.
Innovation Solution
Incorporating a low-strength layer between the electrode layer and the bonding layer, where the bonding layer has higher strength than the electrode layer and the low-strength layer has lower strength than the electrode layer, ensuring the low-strength layer is damaged first under thermal stress, thereby protecting the electrode layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high-melting point solder material is used in the bonding layer, then the bonding layer has higher strength than the electrode layer, but the electrode layer is damaged prior to the solder layer due to thermal stress
Solution Approach 1:
A low-strength layer is introduced as an intermediary between the electrode layer and the bonding layer. This low-strength layer has lower strength than both the electrode layer and the bonding layer, serving as a stress buffer that absorbs thermal stress and prevents direct stress transmission to the electrode layer, thereby protecting it from damage while maintaining the high-strength bonding layer configuration
Solution Approach 2:
The low-strength layer is positioned beforehand between the electrode layer and bonding layer to cushion against thermal stress before damage can occur to the electrode layer. This preemptive cushioning arrangement ensures that when thermal stress is applied, the low-strength layer deforms first, absorbing the stress and preventing it from reaching the electrode layer
Data Source
AI summary
A semiconductor device includes: a semiconductor element that includes an electrode layer on a surface of the semiconductor element; a low-strength layer that is provided on a surface of the electrode layer; a bonding layer that is provided on a surface of the low-strength layer; and a conductive plate that is provided on a surface of the bonding layer. Strength of the bonding layer is higher than strength of the electrode layer, and strength of the low-strength layer is lower than the strength of the electrode layer.