Semiconductor Lower Electrode Height Variation for Leakage Reduction

Solution Overview

Problem

Semiconductor devices with high electric capacitance in peripheral regions often experience bridge defects and leakage current issues due to the formation of capacitors with high electric capacitance, leading to operational defects and reduced reliability.

Innovation Solution

The semiconductor device design includes lower electrodes of varying heights, with a supporting layer pattern and a dielectric layer, and an upper electrode with a planar surface, where the metal contact is positioned to face the shorter side of the lower electrode, reducing the likelihood of bridge defects and leakage currents by increasing the distance between the metal contact and the lower electrode.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If capacitors with high electric capacitance are formed in the peripheral region, then the electric source and voltage requirements are reduced, but bridge defects with upper metal contacts and leakage current defects are frequently generated

Engineering Contradiction:

Improveelectric source and voltage requirementsVSAvoidoperational defects

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent applies local quality by making the lower electrode height position-dependent: lower electrodes at peripheral regions (facing metal contacts) are shorter than those at central regions. This local structural variation reduces the risk of bridge defects and leakage currents in the peripheral region while maintaining high electric capacitance functionality, thus resolving the contradiction between energy efficiency and reliability.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent introduces asymmetry in the lower electrode structure by creating different heights at different positions. The lower electrodes are designed with asymmetric profiles where the height varies depending on the position relative to the metal contact, specifically making peripheral lower electrodes shorter. This asymmetric design effectively reduces bridge defects and leakage currents while maintaining the required capacitance performance.

Inventive Principle:

Principle #4Asymmetry

2Reliability

If capacitors with high electric capacitance are formed in the peripheral region, then the operational functionality is improved, but leakage current defects are frequently generated

Engineering Contradiction:

Improveoperational functionalityVSAvoidleakage current defects

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by making the lower electrode height position-dependent: lower electrodes at peripheral regions (facing metal contacts) are shorter than those at central regions. This local structural variation reduces the risk of bridge defects and leakage currents in the peripheral region while maintaining high electric capacitance functionality, thus resolving the contradiction between energy efficiency and reliability.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent applies preliminary anti-action by proactively designing shorter lower electrodes in peripheral regions before the formation of metal contacts. This preventive structural design anticipates and counteracts the potential formation of leakage current paths, eliminating the harmful effect before it can occur during device operation.

Inventive Principle:

Principle #9Preliminary anti-action

3Reliability

If the lower electrode height is increased for high capacitance, then the electric capacitance is improved, but the distance to metal contact is reduced increasing bridge defects

Engineering Contradiction:

Improveelectric capacitanceVSAvoidbridge defects

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by making the lower electrode height position-dependent: lower electrodes at peripheral regions (facing metal contacts) are shorter than those at central regions. This local structural variation reduces the risk of bridge defects and leakage currents in the peripheral region while maintaining high electric capacitance functionality, thus resolving the contradiction between energy efficiency and reliability.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent resolves the contradiction by introducing a spatial dimension variation in the lower electrode height. Instead of using a uniform height, the lower electrode height is varied along the vertical dimension at different horizontal positions, creating a three-dimensional structure where peripheral lower electrodes are shorter. This dimensional approach allows maintaining high capacitance in central regions while reducing bridge defect risk in peripheral regions.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS8558347B2Semiconductor devices and methods of manufacturing the same

Publication Date: 2013.10.15 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device may include lower electrodes having different heights depending on positions on a substrate. Supporting layer pattern making a contact with the lower electrodes having a relatively large height is provided. The supporting layer pattern is provided between the lower electrodes for supporting the lower electrodes. A dielectric layer is provided on the lower electrodes and the supporting layer pattern. An upper electrode is formed on the dielectric layer and has a planar upper surface. An inter-metal dielectric layer is provided on the upper electrode. A metal contact penetrating through the inter-metal dielectric layer and making a contact with the upper electrode is formed. A bottom portion of the metal contact faces a portion under where the lower electrode having a relatively small height is formed. The device has a higher reliability.