Semiconductor Magnetic Shielding with Diffusion Barrier
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The miniaturization of semiconductor devices leads to increased electromagnetic radiation noise and interconnect crosstalk, causing malfunctions, and the use of magnetic materials for shielding often results in material diffusion that deteriorates electrical characteristics during manufacturing.
Innovation Solution
A semiconductor apparatus with a magnetic shielding film and a buffer film to prevent diffusion of magnetic material, where the buffer film is disposed between the semiconductor device and the magnetic shielding film, using materials like spinel ferrite for the shielding film and refractory metals for the buffer film to control crystallinity and prevent eddy current loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a magnetic shielding film is added to reduce electromagnetic noise, then electromagnetic shielding effectiveness is improved, but device structure becomes more complex
Solution Approach 1:
The buffer film is nested between the semiconductor device and the magnetic shielding film, creating a multi-layered structure where each layer serves a specific function. This nested arrangement allows the buffer film to prevent diffusion while the magnetic shielding film provides electromagnetic noise reduction, resolving the contradiction by integrating multiple functions into a compact layered structure.
Solution Approach 2:
The invention uses composite material structure combining buffer film material (such as tungsten, molybdenum, or their alloys) with magnetic shielding film material (such as ferrite or other magnetic materials). This composite approach allows the buffer film to provide diffusion barrier functionality while the magnetic shielding film provides electromagnetic shielding, thereby reducing electromagnetic noise without excessive structural complexity.
2Object-affected harmful factors
If magnetic material is used for shielding, then electromagnetic shielding effectiveness is improved, but material diffusion occurs during manufacturing
Solution Approach 1:
The buffer film acts as an intermediary layer between the semiconductor device and the magnetic shielding film. This intermediary buffer film (composed of materials like tungsten, molybdenum, or their alloys) prevents direct contact and material diffusion between the magnetic shielding film and the semiconductor device, thereby maintaining electrical characteristics reliability while still allowing the magnetic shielding film to provide effective electromagnetic noise reduction.
Solution Approach 2:
The buffer film is formed in advance before the magnetic shielding film is deposited. This preliminary action of creating a diffusion barrier layer ensures that when the magnetic shielding film is subsequently formed, material diffusion is already prevented, thereby maintaining the reliability of electrical characteristics while achieving effective electromagnetic shielding.
3Reliability
If buffer film is added to prevent diffusion, then electrical characteristics are maintained, but device structure becomes more complex
Solution Approach 1:
The buffer film is nested within the existing device structure between the semiconductor device and the magnetic shielding film. This nested configuration allows the buffer film to provide diffusion prevention functionality without significantly increasing overall device complexity, as it integrates seamlessly into the layered structure already present in semiconductor devices.
Solution Approach 2:
The buffer film is implemented as a thin film layer (typically nanometer to micrometer scale) that provides diffusion barrier functionality without adding significant structural complexity. This thin film approach allows the buffer film to maintain electrical characteristics while minimizing impact on device structure and maintaining compatibility with existing manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces electromagnetic noise and interconnect crosstalk while maintaining the electrical integrity of the semiconductor device by preventing magnetic material diffusion and enhancing magnetic shielding effectiveness without degrading the device's performance.
Implementation Method 1
a buffer film disposed between the semiconductor device and the magnetic shielding film, and preventing diffusion of the magnetic material of the magnetic shielding film
Implementation Method 2
An approach of utilizing magnetic loss of magnetic material is well known as a procedure for reducing electromagnetic radiation noise
Implementation Method 3
the ferrimagnetic material film is disposed between one interconnect layer and the other interconnect layer to exhibit an electromagnetic shield function
Data Source
AI summary
A method for manufacturing a semiconductor apparatus includes forming a semiconductor device on a principal surface of a substrate, in which the semiconductor device includes an interconnect layer, forming a buffer film which covers the semiconductor device and prevents diffusion of a magnetic material, and forming a magnetic shielding film which covers the buffer film and includes the magnetic material.