Semiconductor Mark Protection During Dicing

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Solution Overview

Problem

The cutting of semiconductor wafers with dicing blades often results in chipping and cracks, particularly when alignment marks are present, leading to potential defects from marks dropping off and becoming large foreign matters in subsequent processes.

Innovation Solution

A manufacturing method involving the formation of marks with a different material on the semiconductor wafer, followed by covering these marks with a protective or electrode film that extends into the dicing region, preventing the marks from coming off even if cracks occur during dicing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If marks are applied in the dicing region for alignment purposes, then positioning accuracy is improved, but cracks and chipping occur on the semiconductor substrate during dicing

Engineering Contradiction:
Improvepositioning accuracyVSAvoidsubstrate integrity
Core Design Contradiction:
Measurement precisionVSStrength

Solution Approach 1:

A protective film is formed over the marks before the dicing process begins. This preliminary protective action prevents the dicing blade from directly contacting the marks and substrate, thereby avoiding cracks and chipping while maintaining positioning accuracy through the underlying marks

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The protective film acts as an intermediary layer between the dicing blade and the semiconductor substrate with marks. This intermediate layer absorbs the mechanical stress during cutting, preventing direct transmission of force to the substrate and marks, thus avoiding cracks while preserving alignment functionality

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If dicing is performed with a dicing blade, then semiconductor devices are separated into individual pieces, but marks may come off the substrate and become large foreign matters

Engineering Contradiction:
Improvedevice separationVSAvoidforeign matter generation
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The protective film is applied to the marks before dicing occurs. This preliminary protection ensures that even if cracks develop in the substrate during the separation process, the marks remain anchored to the substrate through the protective film, preventing them from detaching and becoming foreign matters in subsequent processing

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The protective film provides beforehand cushioning to the marks during the dicing process. It absorbs and distributes the mechanical stress that would otherwise concentrate on the marks and substrate interface, preventing mark detachment and reducing the risk of foreign matter contamination in later stages

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS10297520B2Semiconductor device and manufacturing method of a semiconductor device
Publication Date: 2019.05.21 DENSO CORP
  • US10297520B2 patent drawing
  • US10297520B2 patent drawing
  • US10297520B2 patent drawing

AI summary

A manufacturing method of a semiconductor device includes: forming a mark on a surface of a semiconductor wafer, at least a part of the mark being disposed in a planned-peripheral region, the planned-peripheral region being located around a respective planned-element region where a semiconductor element is to be formed; forming the semiconductor element in the planned-element region using the mark; forming a film that extends across a range including the planned-element region or the planned-peripheral region in the surface so as to cover at least a part of the mark with the film, after forming the semiconductor element; and after forming the film, cutting the semiconductor wafer along a dicing region, the dicing region located around the planned-peripheral region.